High Speed Vlsi Interconnections

This Second Edition focuses on emerging topics and advances in the field of VLSI interconnections In the decade since High-Speed VLSI Interconnections was first published, several major developments have taken place in the field. Now, updated to reflect these advancements, this Second Edition includes new information on copper interconnections, nanotechnology circuit interconnects, electromigration in the copper interconnections, parasitic inductances, and RLC models for comprehensive analysis of interconnection delays and crosstalk. Each chapter is designed to exist independently or as a part of one coherent unit, and several appropriate exercises are provided at the end of each chapter, challenging the reader to gain further insight into the contents being discussed. Chapter subjects include: * Preliminary Concepts * Parasitic Resistances, Capacitances, and Inductances * Interconnection Delays * Crosstalk Analysis * Electromigration-Induced Failure Analysis * Future Interconnections High-Speed VLSI Interconnections, Second Edition is an indispensable reference for high-speed VLSI designers, RF circuit designers, and advanced students of electrical engineering.

Modeling and Simulation of High Speed VLSI Interconnects brings together in one place important contributions and state-of-the-art research results in this rapidly advancing area. Modeling and Simulation of High Speed VLSI Interconnects serves as an excellent reference, providing insight into some of the most important issues in the field.

In recent years, customer demands for higher speeds and smaller chips have resulted in the use of interconnections in multilevel and multilayer configurations. Various issues associated with very large scale integrated circuit (VLSIC) interconnections used for high-speed applications are emphasized. Written for those who want to gain a better understanding of the factors associated with modeling, analyzing and simulating high-density, high-speed interconnections, the chapters are designed so that they can be read independently.

Compact Models and Measurement Techniques for High-Speed Interconnects provides detailed analysis of issues related to high-speed interconnects from the perspective of modeling approaches and measurement techniques. Particular focus is laid on the unified approach (variational method combined with the transverse transmission line technique) to develop efficient compact models for planar interconnects. This book will give a qualitative summary of the various reported modeling techniques and approaches and will help researchers and graduate students with deeper insights into interconnect models in particular and interconnect in general. Time domain and frequency domain measurement techniques and simulation methodology are also explained in this book.

Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.

The appropriate interconnect model has changed several times over the past two decades due to the application of aggressive technology scaling. New, more accurate interconnect models are required to manage the changing physical characteristics of integrated circuits. Currently, RC models are used to analyze high resistance nets while capacitive models are used for less resistive interconnect. However, on-chip inductance is becoming more important with integrated circuits operating at higher frequencies, since the inductive impedance is proportional to the frequency. The operating frequencies of integrated circuits have increased dramatically over the past decade and are expected to maintain the same rate of increase over the next decade, approaching 10 GHz by the year 2012. Also, wide wires are frequently encountered in important global nets, such as clock distribution networks and in upper metal layers, and performance requirements are pushing the introduction of new materials for low resistance interconnect, such as copper interconnect already used in many commercial CMOS technologies. On-Chip Inductance in High Speed Integrated Circuits deals with the design and analysis of integrated circuits with a specific focus on on-chip inductance effects. It has been described throughout this book that inductance can have a tangible effect on current high speed integrated circuits. For example, neglecting inductance and using an RC interconnect model in a production 0.25 mum CMOS technology can cause large errors (over 35%) in estimates of the propagation delay of on-chip interconnect. It has also been shown that including inductance in the repeater insertion design process as compared to using an RC model improves the overall repeater solution in terms of area, power, and delay with average savings of 40.8%, 15.6%, and 6.7%, respectively. On-Chip Inductance in High Speed Integrated Circuits is full of design and analysis techniques for RLC interconnect. These techniques are compared to techniques traditionally used for RC interconnect design to emphasize the effect of inductance. emOn-Chip Inductance in High Speed Integrated Circuits will be of interest to researchers in the area of high frequency interconnect, noise, and high performance integrated circuit design.

The brief primarily focuses on the performance analysis of CNT based interconnects in current research scenario. Different CNT structures are modeled on the basis of transmission line theory. Performance comparison for different CNT structures illustrates that CNTs are more promising than Cu or other materials used in global VLSI interconnects. The brief is organized into five chapters which mainly discuss: (1) an overview of current research scenario and basics of interconnects; (2) unique crystal structures and the basics of physical properties of CNTs, and the production, purification and applications of CNTs; (3) a brief technical review, the geometry and equivalent RLC parameters for different single and bundled CNT structures; (4) a comparative analysis of crosstalk and delay for different single and bundled CNT structures; and (5) various unique mixed CNT bundle structures and their equivalent electrical models.