MOSFET Modeling for Circuit Analysis and Design

MOSFET Modeling for Circuit Analysis and Design
Author: Carlos Galup-Montoro,M rcio Cherem Schneider
Publsiher: World Scientific
Total Pages: 445
Release: 2007
Genre: Technology & Engineering
ISBN: 9789812568106

Download MOSFET Modeling for Circuit Analysis and Design Book in PDF, Epub and Kindle

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

MOSFET Modeling for Circuit Analysis and Design

MOSFET Modeling for Circuit Analysis and Design
Author: Carlos Galup-Montoro,M rcio Cherem Schneider
Publsiher: World Scientific
Total Pages: 445
Release: 2007
Genre: Technology & Engineering
ISBN: 9789812568106

Download MOSFET Modeling for Circuit Analysis and Design Book in PDF, Epub and Kindle

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

CMOS Analog Design Using All Region MOSFET Modeling

CMOS Analog Design Using All Region MOSFET Modeling
Author: Márcio Cherem Schneider,Carlos Galup-Montoro
Publsiher: Cambridge University Press
Total Pages: 505
Release: 2010-01-28
Genre: Technology & Engineering
ISBN: 9780521110365

Download CMOS Analog Design Using All Region MOSFET Modeling Book in PDF, Epub and Kindle

The essentials of analog circuit design with a unique all-region MOSFET modeling approach.

Analysis and Design of MOSFETs

Analysis and Design of MOSFETs
Author: Juin Jei Liou,Adelmo Ortiz-Conde,Francisco Garcia-Sanchez
Publsiher: Springer Science & Business Media
Total Pages: 356
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 9781461554158

Download Analysis and Design of MOSFETs Book in PDF, Epub and Kindle

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

Mosfet Modeling for VLSI Simulation

Mosfet Modeling for VLSI Simulation
Author: Narain Arora
Publsiher: World Scientific
Total Pages: 632
Release: 2007-02-14
Genre: Electronic Book
ISBN: 9789814365499

Download Mosfet Modeling for VLSI Simulation Book in PDF, Epub and Kindle

' A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today''s (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs. Contents: OverviewReview of Basic Semiconductor and pn Junction TheoryMOS Transistor Structure and OperationMOS CapacitorThreshold VoltageMOSFET DC ModelDynamic ModelModeling Hot-Carrier EffectsData Acquisition and Model Parameter MeasurementsModel Parameter Extraction Using Optimization MethodSPICE Diode and MOSFET Models and Their ParametersStatistical Modeling and Worst-Case Design Parameters Readership: Integrated circuit chip designers, device model developers and circuit simulators. '

BSIM4 and MOSFET Modeling for IC Simulation

BSIM4 and MOSFET Modeling for IC Simulation
Author: Weidong Liu,Chenming Hu
Publsiher: World Scientific
Total Pages: 435
Release: 2011
Genre: Technology & Engineering
ISBN: 9789812813992

Download BSIM4 and MOSFET Modeling for IC Simulation Book in PDF, Epub and Kindle

This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

MOSFET Models for VLSI Circuit Simulation

MOSFET Models for VLSI Circuit Simulation
Author: Narain D. Arora
Publsiher: Springer Science & Business Media
Total Pages: 628
Release: 2012-12-06
Genre: Computers
ISBN: 9783709192474

Download MOSFET Models for VLSI Circuit Simulation Book in PDF, Epub and Kindle

Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.

Compact Transistor Modelling for Circuit Design

Compact Transistor Modelling for Circuit Design
Author: Henk C. de Graaff,Francois M. Klaassen
Publsiher: Springer Science & Business Media
Total Pages: 367
Release: 2012-12-06
Genre: Computers
ISBN: 9783709190432

Download Compact Transistor Modelling for Circuit Design Book in PDF, Epub and Kindle

During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.