Crystal Growth Of Si Ingots For Solar Cells Using Cast Furnaces

Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces is the first book written to both comprehensively describe these concepts and technologies and compare the strengths and weaknesses of various techniques. Readers will learn about the basic growth and characterization of Si crystals, including sections on the history of cast methods for Si ingots for solar cells. Methods discussed include the dendrite cast method, as well as other significant technologies, including the high-performance (HP) cast and mono-like cast methods. These concepts, growth mechanisms, growth technologies, and the problems that still need to be solved are all included in this comprehensive volume. Covers the concept of crystal growth, providing an understanding of each growth method Discusses the quality of Si ingot, mainly from the viewpoint of crystal defects and their control Reviews fundamental characterization concepts to discern the quality of ingots and wafers Discusses concepts and technologies to establish a low-temperature region in a Si melt using the NOC method in order to obtain a uniform and large Si single ingot with low stress

This book, a continuation of the series “Advances in Materials Research,” is intended to provide the general basis of the science and technology of crystal growth of silicon for solar cells. In the face of the destruction of the global environment,the degradationofworld-widenaturalresourcesandtheexha- tion of energy sources in the twenty-?rst century, we all have a sincere desire for a better/safer world in the future. In these days, we strongly believe that it is important for us to rapidly developanewenvironment-friendlycleanenergyconversionsystemusingsolar energyastheultimatenaturalenergysource. Forinstance,mostofournatural resources and energy sources will be exhausted within the next 100 years. Speci?cally, the consumption of oil, natural gas, and uranium is a serious problem. Solar energy is the only ultimate natural energy source. Although 30% of total solar energy is re?ected at the earth’s surface, 70% of total solar energy can be available for us to utilize. The available solar energy amounts to severalthousand times larger than the world’s energy consumption in 2000 of about 9,000 Mtoe (M ton oil equivalent). To manage 10% of the world’s energy consumption at 2050 by solar energy, we must manufacture 40 GW solar cells per year continuously for 40 years. The required silicon feedstock is about 400,000 ton per year. We believe that this is an attainable target, since it can be realized by increasing the world production of silicon feedstock by 12times asmuchasthe presentproductionat2005.

New advanced materials are being rapidly developed, thanks to the progress of science. These are making our daily life more convenient. The Institute for Materials Research (IMR) at Tohoku University has greatly contributed for to the creation and development of various advanced materials and the progress in the ?eld of material science for almost a century. For example, our early research achievements on the physical metallurgy of iron carbon alloys led to the innovation of technology for making high-quality steels, which has greatly contributed to the advancement of the steel and related industry in Japan and rest of the world. IMR has focused on basic research that can be translated into applications in the future, for the bene?t of mankind. With this tradition, we have established the ?rst high-magnetic ?eld as well as low-temperature technologies in Japan, which were essential to the - vancement of magnetism and superconductivity. Recently, IMR has expanded its research in the ?eld of advanced materials including metallic glasses, - ramics, nano-structural metals, semiconductors, solar cell crystals, new op- andspin-electronicsmaterials,organicmaterials,hydrogenstoragealloys,and shaped crystals. Inthefaceofthecrisisofthedestructionoftheglobalenvironment,the- pletion of world-wide natural resources, and the exhaustion of energy sources in the twenty-?rst century, we all have an acute/serious desire for a b- ter/safer world in the future. IMR has been and will continue the pursuit of research aimed at solving global problems and furthering eco-friendly dev- opment.

Published in association with the International Solar Energy Society, this four-volume set focusses on the latest research and development initiatives of experts involved in one of the fundamental issues facing society today: the global energy problem.

The European Photovoltaic Solar Energy Conferences are dedicated to accelerating the impetus towards sustainable development of global PV markets. The 16th in the series, held in Glasgow UK, brought together more than 1500 delegates from 72 countries, and provided an important and vital forum for information exchange in the field. The Conference Proceedings place on record a new phase of market development and scientific endeavour in the PV industry, representing current and innovative thinking in all aspects of the science, technology, markets and business of photovoltaics. In three volumes, the Proceedings present some 790 papers selected for presentation by the scientific review committee of the 16th European Photovoltaic Solar Energy Conference. The comprehensive range of topics covered comprise: * Fundamentals, Novel Devices and New Materials * Thin Film Cells and Technologies * Space Cells and Systems * Crystalline Silicon Solar Cells and Technologies * PV Integration in Buildings * PV Modules and Components of PV Systems * Implementation, Strategies, National Programs and Financing Schemes * Market Deployment in Developing Countries These proceedings are an essential reference for all involved in the global PV industry- scientists, researchers, technologists and those with an interest in global market trends. The conference was organised by WIP-Renewable Energies, Munich, Germany.

Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. Presents the latest research and most comprehensive overview of both standard and novel semiconductors Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond