Defects And Impurities In Silicon Materials
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Defects and Impurities in Silicon Materials
Author | : Yutaka Yoshida,Guido Langouche |
Publsiher | : Springer |
Total Pages | : 498 |
Release | : 2016-03-30 |
Genre | : Technology & Engineering |
ISBN | : 9784431558002 |
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This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Intrinsic Point Defects Impurities and Their Diffusion in Silicon
Author | : Peter Pichler |
Publsiher | : Springer Science & Business Media |
Total Pages | : 554 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 9783709105979 |
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This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Silicon Germanium and Their Alloys
Author | : Gudrun Kissinger,Sergio Pizzini |
Publsiher | : CRC Press |
Total Pages | : 436 |
Release | : 2014-12-09 |
Genre | : Science |
ISBN | : 9781466586642 |
Download Silicon Germanium and Their Alloys Book in PDF, Epub and Kindle
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Science and Technology of Defects in Silicon
Author | : C.A.J. Ammerlaan,A. Chantre,P. Wagner |
Publsiher | : Elsevier |
Total Pages | : 518 |
Release | : 2014-01-01 |
Genre | : Technology & Engineering |
ISBN | : 9780080983646 |
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This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Gettering and Defect Engineering in Semiconductor Technology XV
Author | : J. D. Murphy |
Publsiher | : Unknown |
Total Pages | : 516 |
Release | : 2013 |
Genre | : Getters |
ISBN | : OCLC:868672758 |
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The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems. Review from Book News Inc.: The proceedings for GADEST 2013 contains 84 papers on such matters as defect engineering in silicon solar cells, structural and production issues in cast silicon materials for solar cells, characterizing silicon for solar cells, intrinsic point defects in silicon, light impurities in silicon-based materials, fundamental properties and gettering of metals in silicon, extended and implantation-related defects in silicon, germanium-based devices and materials, semiconductors other than silicon and germanium, and nanostructures and new materials systems.
Gettering and Defect Engineering in Semiconductor Technology XV
Author | : J.D. Murphy |
Publsiher | : Trans Tech Publications Ltd |
Total Pages | : 520 |
Release | : 2013-10-07 |
Genre | : Technology & Engineering |
ISBN | : 9783038262053 |
Download Gettering and Defect Engineering in Semiconductor Technology XV Book in PDF, Epub and Kindle
The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.
Metal Impurities in Silicon Device Fabrication
Author | : Klaus Graff |
Publsiher | : Springer Science & Business Media |
Total Pages | : 228 |
Release | : 2013-03-08 |
Genre | : Technology & Engineering |
ISBN | : 9783642975936 |
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A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.
Silicon Materials Science and Technology
Author | : Anonim |
Publsiher | : Unknown |
Total Pages | : 894 |
Release | : 1998 |
Genre | : Semiconductors |
ISBN | : UIUC:30112032998889 |
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