Dielectrics For Nanosystems

This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectics and that have reached below 100nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy source, and various types of sensing devices. As long as one or more of these fuctional devices is in the 1-100nm dimensions, the resultant system can be defined as a nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addtional to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.

This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectronics have reached below 100 nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy sources, and various types of sensing devices. As long as one or more of these functional devices is in 1-100 nm dimensions, the resultant system can be defined as nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addition to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.

This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.

This issue will cover papers relating to advanced semiconductor products that are true representatives of nanoelectronics have reached below 100 nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy sources, and various types of sensing devices. As long as one or more of these functional devices is in 1-100 nm dimensions, the resultant system can be defined as nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addition to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems. Beyond CMOS device structures and properties of semiconductor nanoelectronics will also be included.