Ferroelectric Dielectrics Integrated On Silicon

This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies. After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterization. An in-depth study of the influence of leakage currents is performed together with reliability discussion. Three applicative chapters cover integrated capacitors, variables capacitors and ferroelectric memories. The final chapter deals with a reasonably new research field, multiferroic thin films.

Ferroelectric (FE) ceramics with a large relative dielectric permittivity and a high dielectric strength have the potential to store or supply electricity of very high energy and power densities, which is desirable in many modern electronic and electrical systems. For a given FE material, such as the commonly-used BaTiO3, a close interplay between defect chemistry, misfit strain, and grain characteristics must be carefully manipulated for engineering its film capacitors. In this work, the effects of grain orientation and morphology on the energy storage properties of BaTiO3 thick films were systematically investigated. These films were all deposited on Si at 500 °C in an oxygen-rich atmosphere, and their thicknesses varied between ~500 nm and ~2.6 μm. While a columnar nanograined BaTiO3 film with a (001) texture showed a higher recyclable energy density Wrec (81.0 J/cm3vs. 57.1 J/[email protected] MV/cm, ~40% increase) than that of a randomly-oriented BaTiO3 film of about the same thickness (~500 nm), the latter showed an improved energy density at a reduced electric field with an increasing film thickness. Specifically, for the 1.3 μm and 2.6 μm thick polycrystalline films, their energy storage densities Wrec reached 46.6 J/cm3 and 48.8 J/cm3 at an applied electric field of 2.31 MV/cm (300 V on 1.3 μm film) and 1.77 MV/cm (460 V on 2.6 μm film), respectively. This ramp-up in energy density can be attributed to increased polarizability with a growing grain size in thicker polycrystalline films and is desirable in high pulse power applications.

This comprehensive book covers recent developments in advanced dielectric, piezoelectric and ferroelectric materials. Dielectric materials such as ceramics are used to manufacture microelectronic devices. Piezoelectric components have been used for many years in radioelectrics, time-keeping and, more recently, in microprocessor-based devices. Ferroelectric materials are widely used in various devices such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage and display devices.The book is divided into eight parts under the general headings: High strain high performance piezo- and ferroelectric single crystals; Electric field-induced effects and domain engineering; Morphotropic phase boundary related phenomena; High power piezoelectric and microwave dielectric materials; Nanoscale piezo- and ferroelectrics; Piezo- and ferroelectric films; Novel processing and new materials; Novel properties of ferroelectrics and related materials. Each chapter looks at key recent research on these materials, their properties and potential applications.Advanced dielectric, piezoelectric and ferroelectric materials is an important reference tool for all those working in the area of electrical and electronic materials in general and dielectrics, piezoelectrics and ferroelectrics in particular. Covers the latest developments in advanced dielectric, piezoelectric and ferroelectric materials Includes topics such as high strain high performance piezo and ferroelectric single crystals Discusses novel processing and new materials, and novel properties of ferroelectrics and related materials

Combining both fundamental principles and real-life applications in a single volume, this book discusses the latest research results in ferroelectrics, including many new ferroelectric materials for the latest technologies, such as capacitors, transducers and memories. The first two chapters introduce dielectrics and microscopic materials properties, while the following chapter discusses pyroelectricity and piezoelectricity. The larger part of the text is devoted to ferroelectricity and ferroelectric ceramics, with not only their fundamentals but also applications discussed. The book concludes with a look at the future for laser printed materials and applications. With over 600 references to recent publications on piezoelectric and ferroelectric materials, this is an invaluable reference for physicists, materials scientists and engineers.

This title is part of UC Press's Voices Revived program, which commemorates University of California Press’s mission to seek out and cultivate the brightest minds and give them voice, reach, and impact. Drawing on a backlist dating to 1893, Voices Revived makes high-quality, peer-reviewed scholarship accessible once again using print-on-demand technology. This title was originally published in 1979.

This book addresses the difficulty of obtaining a quality solution, that is, pre optimal or even optimal, in a reasonable time from a central processing unit (CPU). As polynomial problems can be treated by exact methods, the problem posed concerns non-polynomial problems, for which it is necessary to develop efficient algorithms based on heuristics or meta-heuristics. Chapter 3 of this book demonstrates how to develop such algorithms, which are characterized by: an initialization of argued solutions (sometimes, the global optimum can be obtained from such an initialization); a non-random generation of solutions (to avoid generating the same solution several times, or even generating solutions that cannot be achieved); avoidance of being trapped by a local optimum; good use of CPU time by reducing the size of the space of solutions to be explored (which is often very large for such problems) without compromising the quality of the solution; plus a reasoned displacement from one solution to another, to improve the quality of the solution as the processing is carried out. These aspects are applied to concrete applications in the design of integrated circuits and systems at various levels. To do this and to help the reader better understand this problem, Chapters 1 and 2 present basic notions on computational complexity, and the design of integrated circuits and systems.