Field Emission From Silicon And Polycrystalline Silicon Surfaces
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Porous Silicon From Formation to Applications Optoelectronics Microelectronics and Energy Technology Applications Volume Three
Author | : Ghenadii Korotcenkov |
Publsiher | : CRC Press |
Total Pages | : 431 |
Release | : 2016-01-06 |
Genre | : Science |
ISBN | : 9781482264593 |
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Porous silicon is rapidly attracting increasing interest from various fields, including optoelectronics, microelectronics, photonics, medicine, sensor and energy technologies, chemistry, and biosensing. This nanostructured and biodegradable material has a range of unique properties that make it ideal for many applications. This book, the third of a
Polycrystalline Silicon for Integrated Circuits and Displays
Author | : Ted Kamins |
Publsiher | : Springer Science & Business Media |
Total Pages | : 391 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 9781461555773 |
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Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.
Polycrystalline Silicon for Integrated Circuit Applications
Author | : Ted Kamins |
Publsiher | : Springer Science & Business Media |
Total Pages | : 302 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 9781461316817 |
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Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.
Official Gazette of the United States Patent and Trademark Office
Author | : United States. Patent and Trademark Office |
Publsiher | : Unknown |
Total Pages | : 898 |
Release | : 1997 |
Genre | : Patents |
ISBN | : WISC:89061475901 |
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Ultraclean Surface Processing of Silicon Wafers
Author | : Takeshi Hattori |
Publsiher | : Springer Science & Business Media |
Total Pages | : 634 |
Release | : 2013-03-09 |
Genre | : Technology & Engineering |
ISBN | : 9783662035351 |
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A totally new concept for clean surface processing of Si wafers is introduced in this book. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.
Silicon Integrated Circuits
Author | : Dawon Kahng |
Publsiher | : Academic Press |
Total Pages | : 429 |
Release | : 2013-10-22 |
Genre | : Technology & Engineering |
ISBN | : 9781483273112 |
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Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters—physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This publication is a good source for students and individuals interested in MOS-based integrated circuits.
Japanese Journal of Applied Physics
Author | : Anonim |
Publsiher | : Unknown |
Total Pages | : 880 |
Release | : 2007 |
Genre | : Physics |
ISBN | : UCSD:31822036024925 |
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Cold Cathodes II
Author | : M. Cahay,Kevin L. Jensen,Thien Binh Vu |
Publsiher | : The Electrochemical Society |
Total Pages | : 432 |
Release | : 2002 |
Genre | : Technology & Engineering |
ISBN | : 1566773423 |
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