Gamma And X Ray Spectrometry With Semiconductor Detectors

Hardbound. This book covers the topics essential to gamma- and x-ray spectrometry as it is now practiced with semiconductor detectors in the energy range from 5keV to 3MeV. This includes useful physical and mathematical background information, the components of a standard photon spectrometer, spectrum analysis procedures, the energy and efficiency calibration, energy and emission-rate measurement methods and some application examples.

Applied Gamma-Ray Spectrometry covers real life application of the gamma-ray and the devices used in their experimental studies. This book is organized into 9 chapters, and starts with discussions of the various decay processes, the possible interaction mechanisms of gamma radiation with matter, and the intrinsic and extrinsic variables, which affect the observed gamma-ray and X-ray spectra. The subsequent chapters deal with the properties and fabrication of scintillation detectors, semiconductor detectors, and proportional gas counters. These chapters present some of the most widely utilized applications of these detectors, with a particular emphasis to the activation analysis. These topics are followed by reviews of the description of basic equipment, such as amplifiers, analyzers, special spectrometer arrangements, and detector shielding. Other chapters describe energy and time resolution and quantitative calibration. The quantitative and qualitative interpretation of the spectra is also explained, along with the calibration of the detectors. The last chapter considers the analytical applications of gamma-ray and X-ray spectrometry in tracer studies, activation analysis, fission product studies, and X-ray fluorescence analysis. This book will be of value to analytical chemists and analytical chemistry researchers.

Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its

The Second Edition of Practical Gamma-Ray Spectrometry has been completely revised and updated, providing comprehensive coverage of the whole gamma-ray detection and spectrum analysis processes. Drawn on many years of teaching experience to produce this uniquely practical volume, issues discussed include the origin of gamma-rays and the issue of quality assurance in gamma-ray spectrometry. This new edition also covers the analysis of decommissioned nuclear plants, computer modelling systems for calibration, uncertainty measurements in QA, and many more topics.

Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.

The advances in semiconductor detectors, scintillators, photodetectors such as silicon photomultipliers (SiPM), and reaodut electronics have experienced tremendous growth in recent years in terms of basic technologies and variety of applications.The second edition of the book Radiation Detection Systems presents variety of radiation detection systems giving readers a broad view of the state-of–the-art in the design of detectors, front-end electronics and systems offering optimized choices of the detection tools for a particular application. The new edition has been divided into two volumes. This first volume, on Sensor Materials, Systems, Technology and Characterization Measurements puts emphasis on sensor materials, detector structures, front electronics technology and their designs as well as system optimization for different applications. Also, the book include characterization measurements of the developed detection systems. Featuring contributions from leading experts and pioneers in their respective fields, this book • describes progress in growth technologies of cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) materials • shows variety of specific detector structure designs and their integration with front-end amplification/processing electronics • presents detection systems based on CdZnTe and CdTe detector technologies that are optimized for specific applications. The designed systems are characterized in terms of their spectral responses, spatial and timing resolutions • addresses incomplete charge collection, pulse pileup, charge sharing between neighboring detector pixels and other phenomena that can degrade the spectral response of photon-counting detectors • reports new developments of silicon photomultipliers used for reading the light from scintillators that starting to make a big impact particularly in the design concepts of novel medical instrumentation With its combined coverage of new materials and innovative new system approaches, as well as a succinct overview of recent developments, this book is an invaluable tool for any engineer, professional, or student working in electronics or an associated field. Readers can refer to the second book to get a detailed understanding of more specific applications of the detection systems in medical imaging, industrial testing and security applications.

CONTENTS - MAIN NOTATIONS - CONTENTS - CHAPTER I. - INTERACTION OF THE NUCLEAR RADIATION WITH MATTER - 1.1. Interaction of heavy charged particles with matter - 1.2. Passage of electrons through matter - 1.3. Interaction processes of gamma and X-rays - 1.4. Interaction processes of neutrons - 1.5. Conclusions - CHAPTER II. - FUNDAMENTAL PROCESSES IN SEMICONDUCTORS AND METALS - 2.1. Schrödinger equation. The particle inside the potential well - 2.2. The hydrogen atom - 2.3. Theory of the periodic system of elements - 2.4. Electrons in crystals - 2.5. Effective mass - 2.6. Energy bands - 2.7. Statistical distributions - 2.8. Equilibrium density of charge carriers in semiconductors - 2.9. Transport phenomena - 2.10. Recombination phenomena - 2.11. P-N junction - 2.12. Phenomena at the metal-semiconductor interface - CHAPTER III. - WORKING PRINCIPLES OF NUCLEAR RADIATION SEMICONDUCTOR DETECTORS - 3.1. Charge-carrier injection. The mean energy for electron-hole pair production - 3.2. The drift of charge-carriers in the electric field. The shape of the current and voltage pulse given by the collection of a single pair. - 3.3. Collection time of electron-hole pairs in a P-N abrupt junction - 3.4. Collection time of electron-hole pairs in coaxial Ge (Li) detectors - 3.5. Influence of SD equivalent circuit elements on the voltage and current pulse shape - 3.6. Collection of charge-carriers in real devices - 3.7. Collection of electric charges by diffusion from outside the depletion layer - 3.8. Detector noise - 3.9. Detector energy resolution - CHAPTER IV - CHARACTERISTICS OF SEMICONDUCTOR DETECTORS - 4.1. Electrical characteristics - 4.2. Detection characteristics - 4.3. Effects of temperature, magnetic field and light on the semiconductor detector characteristics - 4.4. Detector sensitivity to neutrons and gamma-rays - 4.5. Effects of radiation damage on detector characteristics - CHAPTER V - SEMICONDUCTOR DETECTOR TYPES - 5.1. Methods for obtaining high electric fields in semiconductors - 5.2. Homogeneous semiconductor detectors - 5.3. Diffused N-P junction detectors - 5.4. Surface-barrier detectors - 5.5. Guard-ring detectors - 5.6. Totally depleted detectors - 5.7. Neutron detectors - 5.8. Special detectors - 5.9. NIP detectors - CHAPTER VI - AMPLIFICATION OF SEMICONDUCTOR DETECTOR ELECTRIC PULSES - 6.1. Electric charge to voltage pulse conversion - 6.2. Charge-sensitive-preamplifier-noise specification and measurement - 6.S. Amplifier-noise sources - 6.4. Effects of amplifier shaping circuits on noise spectra - 6.5. RC-RC amplifier signal to noise ratio - CHAPTER VII - SEMICONDUCTOR DETECTOR ASSOCIATED ELECTRONICS - 7.1. Spectrometers with semiconductor detectors - 7.2. Charge sensitive preamplifiers - 7.3. Main amplifier - 7.4. Amplitude analyser and expander - 7.5. High amplitude stability pulse generator - 7.6. Transistorized apparatus - APPENDIX A I: Basic properties of Si and Ge - APPENDIX A II: Main natural and artificial alpha sources - APPENDIX A III: Analysis of some circuits used in charge sensitive preamplifiers - REFERENCES -