Hardware Annealing In Analog Vlsi Neurocomputing

Rapid advances in neural sciences and VLSI design technologies have provided an excellent means to boost the computational capability and efficiency of data and signal processing tasks by several orders of magnitude. With massively parallel processing capabilities, artificial neural networks can be used to solve many engineering and scientific problems. Due to the optimized data communication structure for artificial intelligence applications, a neurocomputer is considered as the most promising sixth-generation computing machine. Typical applica tions of artificial neural networks include associative memory, pattern classification, early vision processing, speech recognition, image data compression, and intelligent robot control. VLSI neural circuits play an important role in exploring and exploiting the rich properties of artificial neural networks by using pro grammable synapses and gain-adjustable neurons. Basic building blocks of the analog VLSI neural networks consist of operational amplifiers as electronic neurons and synthesized resistors as electronic synapses. The synapse weight information can be stored in the dynamically refreshed capacitors for medium-term storage or in the floating-gate of an EEPROM cell for long-term storage. The feedback path in the amplifier can continuously change the output neuron operation from the unity-gain configuration to a high-gain configuration. The adjustability of the vol tage gain in the output neurons allows the implementation of hardware annealing in analog VLSI neural chips to find optimal solutions very efficiently. Both supervised learning and unsupervised learning can be implemented by using the programmable neural chips.

Rapid advances in neural sciences and VLSI design technologies have provided an excellent means to boost the computational capability and efficiency of data and signal processing tasks by several orders of magnitude. With massively parallel processing capabilities, artificial neural networks can be used to solve many engineering and scientific problems. Due to the optimized data communication structure for artificial intelligence applications, a neurocomputer is considered as the most promising sixth-generation computing machine. Typical applica tions of artificial neural networks include associative memory, pattern classification, early vision processing, speech recognition, image data compression, and intelligent robot control. VLSI neural circuits play an important role in exploring and exploiting the rich properties of artificial neural networks by using pro grammable synapses and gain-adjustable neurons. Basic building blocks of the analog VLSI neural networks consist of operational amplifiers as electronic neurons and synthesized resistors as electronic synapses. The synapse weight information can be stored in the dynamically refreshed capacitors for medium-term storage or in the floating-gate of an EEPROM cell for long-term storage. The feedback path in the amplifier can continuously change the output neuron operation from the unity-gain configuration to a high-gain configuration. The adjustability of the vol tage gain in the output neurons allows the implementation of hardware annealing in analog VLSI neural chips to find optimal solutions very efficiently. Both supervised learning and unsupervised learning can be implemented by using the programmable neural chips.

Cellular Neural Networks and Analog VLSI brings together in one place important contributions and up-to-date research results in this fast moving area. Cellular Neural Networks and Analog VLSI serves as an excellent reference, providing insight into some of the most challenging research issues in the field.

It is a great honor to provide a few words of introduction for Dr. Georges Gielen's and Prof. Willy Sansen's book "Symbolic analysis for automated design of analog integrated circuits". The symbolic analysis method presented in this book represents a significant step forward in the area of analog circuit design. As demonstrated in this book, symbolic analysis opens up new possibilities for the development of computer-aided design (CAD) tools that can analyze an analog circuit topology and automatically size the components for a given set of specifications. Symbolic analysis even has the potential to improve the training of young analog circuit designers and to guide more experienced designers through second-order phenomena such as distortion. This book can also serve as an excellent reference for researchers in the analog circuit design area and creators of CAD tools, as it provides a comprehensive overview and comparison of various approaches for analog circuit design automation and an extensive bibliography. The world is essentially analog in nature, hence most electronic systems involve both analog and digital circuitry. As the number of transistors that can be integrated on a single integrated circuit (IC) substrate steadily increases over time, an ever increasing number of systems will be implemented with one, or a few, very complex ICs because of their lower production costs.

Neural Information Processing and VLSI provides a unified treatment of this important subject for use in classrooms, industry, and research laboratories, in order to develop advanced artificial and biologically-inspired neural networks using compact analog and digital VLSI parallel processing techniques. Neural Information Processing and VLSI systematically presents various neural network paradigms, computing architectures, and the associated electronic/optical implementations using efficient VLSI design methodologies. Conventional digital machines cannot perform computationally-intensive tasks with satisfactory performance in such areas as intelligent perception, including visual and auditory signal processing, recognition, understanding, and logical reasoning (where the human being and even a small living animal can do a superb job). Recent research advances in artificial and biological neural networks have established an important foundation for high-performance information processing with more efficient use of computing resources. The secret lies in the design optimization at various levels of computing and communication of intelligent machines. Each neural network system consists of massively paralleled and distributed signal processors with every processor performing very simple operations, thus consuming little power. Large computational capabilities of these systems in the range of some hundred giga to several tera operations per second are derived from collectively parallel processing and efficient data routing, through well-structured interconnection networks. Deep-submicron very large-scale integration (VLSI) technologies can integrate tens of millions of transistors in a single silicon chip for complex signal processing and information manipulation. The book is suitable for those interested in efficient neurocomputing as well as those curious about neural network system applications. It has been especially prepared for use as a text for advanced undergraduate and first year graduate students, and is an excellent reference book for researchers and scientists working in the fields covered.

Centered around 20 major topic areas of both theoretical and practical importance, the World Congress on Neural Networks provides its registrants -- from a diverse background encompassing industry, academia, and government -- with the latest research and applications in the neural network field.

The time has come for high-level synthesis. When research into synthesizing hardware from abstract, program-like de scriptions started in the early 1970' s, there was no automated path from the register transfer design produced by high-level synthesis to a complete hardware imple mentation. As a result, it was very difficult to measure the effectiveness of high level synthesis methods; it was also hard to justify to users the need to automate architecture design when low-level design had to be completed manually. Today's more mature CAD techniques help close the gap between an automat ically synthesized design and a manufacturable design. Market pressures encour age designers to make use of any and all automated tools. Layout synthesis, logic synthesis, and specialized datapath generators make it feasible to quickly imple ment a register-transfer design in silicon,leaving designers more time to consider architectural improvements. As IC design becomes more automated, customers are increasing their demands; today's leading edge designers using logic synthesis systems are training themselves to be tomorrow's consumers of high-level synthe sis systems. The need for very fast turnaround, a competitive fabrication market WhlCh makes small-quantity ASIC manufacturing possible, and the ever growing co:n plexity of the systems being designed, all make higher-level design automaton inevitable.

5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .