High Resolution Electron Microscopy For Materials Science

High-resolution electron microscopy (HREM) has become a most powerful method for investigating the internal structure of materials on an atomic scale of around 0.1 nm. The authors clearly explain both the theory and practice of HREM for materials science. In addition to a fundamental formulation of the imaging process of HREM, there is detailed explanation of image simulationindispensable for interpretation of high-resolution images. Essential information on appropriate imaging conditions for observing lattice images and structure images is presented, and methods for extracting structural information from these observations are clearly shown, including examples in advanced materials. Dislocations, interfaces, and surfaces are dealt with, and materials such as composite ceramics, high-Tc superconductors, and quasicrystals are also considered. Included are sections on the latest instruments and techniques, such as the imaging plate and quantitative HREM.

In-situ high-resolution electron microscopy is a modern and powerful technique in materials research, physics, and chemistry. In-situ techniques are hardly treated in textbooks of electron microscopy. Thus, there is a need to collect the present knowledge about the techniques and achievements of in-situ electron microscopy in one book. Since high-resolution electron microscopes are available in most modern laboratories of materials science, more and more scientists or students are starting to work on this subject.In this comprehensive volume, the most important techniques and achievements of in-situ high-resolution electron microscopy will be reviewed by renowned experts. Applications in several fields of materials science will also be demonstrated.

This book describes how to see atoms using electron microscopes. This new edition includes updated sections on applications and new uses of atomic-resolution transmission electron microscopy. Several new chapters and sources of software for image interpretation and electron-optical design have also been added.

Electron Microscopy in Material Science covers the proceedings of the International School of Electron Microscopy held in Erice, Itsaly, in 1970. The said conference is intended to the developments of electron optics and electron microscopy and its applications in material science. The book is divided into four parts. Part I discusses the impact of electron microscopy in the science of materials. Part II covers topics such as electron optics and instrumentation; geometric electron optics and its problems; and special electron microscope specimen stages. Part III explains the theory of electron diffraction image contrast and then elaborates on related areas such as the application of electron diffraction and of electron microscopy to radiation; computing methods; and problems in electron microscopy. Part IV includes topics such as the transfer of image information in the electron microscope; phase contrast microscopy; and the magnetic phase contrast. The text is recommended for electron microscopists who are interested in the application of their field in material science, as well as for experts in the field of material science and would like to know about the importance of electron microscopy.

This book highlights what is now achievable in terms of materials characterization with the new generation of cold-field emission scanning electron microscopes applied to real materials at high spatial resolution. It discusses advanced scanning electron microscopes/scanning- transmission electron microscopes (SEM/STEM), simulation and post-processing techniques at high spatial resolution in the fields of nanomaterials, metallurgy, geology, and more. These microscopes now offer improved performance at very low landing voltage and high -beam probe current stability, combined with a routine transmission mode capability that can compete with the (scanning-) transmission electron microscopes (STEM/-TEM) historically run at higher beam accelerating voltage

The Advanced Study Institute provided an opportunity for researchers in universities, industry and National and International Laboratories, from the disciplines ofmaterials science, physics, chemistry and engineering to meet together in an assessment of the impact of electron and scanning probe microscopy on advanced material research. Since these researchers have traditionally relied upon different approaches, due to their different scientific background, to advanced materials problem solving, presentations and discussion within the Institute sessions were initially devoted to developing a set ofmutually understood basic concepts, inherently related to different techniques ofcharacterization by microscopy and spectroscopy. Particular importance was placed on Electron Energy Loss Spectroscopy (EELS), Scanning Probe Microscopy (SPM), High Resolution Transmission and Scanning Electron Microscopy (HRTEM, HRSTEM) and Environmental Scanning Electron Microscopy (ESEM). It was recognized that the electronic structure derived directly from EELS analysis as well as from atomic positions in HRTEM or High Angle Annular Dark Field STEM can be used to understand the macroscopic behaviour of materials. The emphasis, however, was upon the analysis of the electronic band structure of grain boundaries, fundamental for the understanding of macroscopic quantities such as strength, cohesion, plasticity, etc.

This book gives a survey of and systematic introduction to high-resolution electron microscopy. The method is carefully discussed, the latest developments are reported, and the application to surface and interface analysis and to the study of hidden structures is presented. The book arises from research carried out at one of the world's leading centers of electron microscopy. It will appeal to researchers and advanced students.