High Speed Low Driving Voltage Vertical Cavity Germanium Silicon Modulators For Optical Interconnect
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High Speed Low Driving Voltage Vertical Cavity Germanium silicon Modulators for Optical Interconnect
Author | : Yiwen Rong |
Publsiher | : Stanford University |
Total Pages | : 116 |
Release | : 2010 |
Genre | : Electronic Book |
ISBN | : STANFORD:zt447wy0367 |
Download High Speed Low Driving Voltage Vertical Cavity Germanium silicon Modulators for Optical Interconnect Book in PDF, Epub and Kindle
Information processing requires interconnects to carry information from one place to another. Optical interconnects between electronics systems have attracted significant attention and development for a number of years because optical links have demonstrated potential advantages for high-speed, low-power, and interference immunity. With increasing system speed and greater bandwidth requirements, the distance over which optical communication is useful has continually decreased to chip-to-chip and on-chip levels. Monolithic integration of photonics and electronics will significantly reduce the cost of optical components and further combine the functionalities of chips on the same or different boards or systems. Modulators are one of the fundamental building blocks for optical interconnects. Previous work demonstrated modulators based upon the quantum confined Stark effect (QCSE) in SiGe p-i-n devices with strained Ge/SiGe multi-quantum-well (MQW) structures in the i region. While the previous work demonstrated the effect, it did not examine the high-speed aspects of the device, which is the focus of this dissertation. High-speed modulation and low driving voltage are the keys for the device's practical use. At lower optical intensity operation, the ultimate limitation in speed will be the RC time constant of the device itself. At high optical intensity, the large number of photo generated carriers in the MQW region will limit the performance of the device through photo carrier related voltage drop and exciton saturation. In previous work, the devices consist of MQWs configured as p-i-n diodes. The electric field induced absorption change by QCSE modulates the optical transmission of the device. The focus of this thesis is the optimization of MQW material deposition, minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The design, fabrication and high-speed characterization of devices of different sizes, with different bias voltages are presented. The device fabrication is based on processes for standard silicon electronics and is suitable for mass-production. This research will enable efficient transceivers to be monolithically integrated with silicon chips for high-speed optical interconnects. We demonstrated a modulator, with an eye diagram of 3.125GHz, a small driving voltage of 2.5V and an f3dB bandwidth greater than 30GHz. Carrier dynamics under ultra-fast laser excitation and high-speed photocurrent response are also investigated.
High Speed Low Driving Voltage Vertical Cavity Germanium silicon Modulators for Optical Interconnect
![High Speed Low Driving Voltage Vertical Cavity Germanium silicon Modulators for Optical Interconnect](https://youbookinc.com/wp-content/uploads/2024/06/cover.jpg)
Author | : Yiwen Rong |
Publsiher | : Unknown |
Total Pages | : 135 |
Release | : 2010 |
Genre | : Electronic Book |
ISBN | : OCLC:689010538 |
Download High Speed Low Driving Voltage Vertical Cavity Germanium silicon Modulators for Optical Interconnect Book in PDF, Epub and Kindle
Information processing requires interconnects to carry information from one place to another. Optical interconnects between electronics systems have attracted significant attention and development for a number of years because optical links have demonstrated potential advantages for high-speed, low-power, and interference immunity. With increasing system speed and greater bandwidth requirements, the distance over which optical communication is useful has continually decreased to chip-to-chip and on-chip levels. Monolithic integration of photonics and electronics will significantly reduce the cost of optical components and further combine the functionalities of chips on the same or different boards or systems. Modulators are one of the fundamental building blocks for optical interconnects. Previous work demonstrated modulators based upon the quantum confined Stark effect (QCSE) in SiGe p-i-n devices with strained Ge/SiGe multi-quantum-well (MQW) structures in the i region. While the previous work demonstrated the effect, it did not examine the high-speed aspects of the device, which is the focus of this dissertation. High-speed modulation and low driving voltage are the keys for the device's practical use. At lower optical intensity operation, the ultimate limitation in speed will be the RC time constant of the device itself. At high optical intensity, the large number of photo generated carriers in the MQW region will limit the performance of the device through photo carrier related voltage drop and exciton saturation. In previous work, the devices consist of MQWs configured as p-i-n diodes. The electric field induced absorption change by QCSE modulates the optical transmission of the device. The focus of this thesis is the optimization of MQW material deposition, minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The design, fabrication and high-speed characterization of devices of different sizes, with different bias voltages are presented. The device fabrication is based on processes for standard silicon electronics and is suitable for mass-production. This research will enable efficient transceivers to be monolithically integrated with silicon chips for high-speed optical interconnects. We demonstrated a modulator, with an eye diagram of 3.125GHz, a small driving voltage of 2.5V and an f3dB bandwidth greater than 30GHz. Carrier dynamics under ultra-fast laser excitation and high-speed photocurrent response are also investigated.
Silicon Photonics
Author | : Joel A. Kubby,Graham T. Reed |
Publsiher | : SPIE-International Society for Optical Engineering |
Total Pages | : 270 |
Release | : 2006 |
Genre | : Technology & Engineering |
ISBN | : 0819461679 |
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Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
Annual Commencement
Author | : Stanford University |
Publsiher | : Unknown |
Total Pages | : 247 |
Release | : 2000 |
Genre | : Electronic Book |
ISBN | : STANFORD:36105111430133 |
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American Doctoral Dissertations
Author | : Anonim |
Publsiher | : Unknown |
Total Pages | : 816 |
Release | : 2000 |
Genre | : Dissertation abstracts |
ISBN | : UOM:39015086908152 |
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Silicon Photonic Modulators for Low power Applications
Author | : Palmer, Robert |
Publsiher | : KIT Scientific Publishing |
Total Pages | : 250 |
Release | : 2015-07-01 |
Genre | : Electronic Book |
ISBN | : 9783731503866 |
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Dissertation Abstracts International
Author | : Anonim |
Publsiher | : Unknown |
Total Pages | : 850 |
Release | : 2001 |
Genre | : Dissertations, Academic |
ISBN | : STANFORD:36105112755835 |
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Physics and Technology of Semiconductor Devices
![Physics and Technology of Semiconductor Devices](https://youbookinc.com/wp-content/uploads/2024/06/cover.jpg)
Author | : Andrew S. Grove |
Publsiher | : Unknown |
Total Pages | : 366 |
Release | : 1967 |
Genre | : Semiconductors |
ISBN | : 0471329991 |
Download Physics and Technology of Semiconductor Devices Book in PDF, Epub and Kindle