High Speed Semiconductor Physics Theoretical Approaches And Device Physics

Solid state physics is a fascinating sub-genre of condensed matter physics - though some graduate students consider it a very boring and tedious subject area in Physics and others even call it a “squalid state”. Topics covered in this book are built on standard solid state physics references available in most online libraries or in other books on solid state physics. The complexity of high speed semiconductor physics and related devices arose from condensed solid state matter. The content covered in this book gives a deep coverage on some topics or sections that may be covered only superficially in other literature. Therefore, these topics are likely to differ a great deal from what is deemed important elsewhere in other books or available literature. There are many extremely good books on solid-state physics and condensed matter physics but very few of these books are restricted to high speed semiconductor physic though. Chapter one covers the general semiconductor qualities that make high speed semiconductor devices effect and includes the theory of crystals, diffusion and ist mechanisms, while chapter two covers solid state materials, material processing for high speed semiconductor devices and an introduction to quantum theory for materials in relation to density of states of the radiation for a black body and ist radiation properties. Chapter three discuss high speed semiconductor energy band theory, energy bands in general solid semiconductor materials, the Debye model, the Einstein model the Debye model and semiconductor transport carriers in 3D semiconductors while chapter four discuss effect of external force on current flow based on the concept of holes valence band, and lattice scattering in high speed devices. Chapter five briefly describes solid state thermoelectric fundamentals, thermoelectric material and thermoelectric theory of solids in lattice and phonons while chapter six scattering in high field effect in semiconductors in inter-valley electron scattering and the associated Fermi Dirac statistics and Maxwell-Boltzmann approximation on their carrier concentration variation with energy in extrinsic doping chapter seven covers p-n junction diodes, varactor diode, pin diode Schottky diode and their transient response of diode in multi-valley semiconductors. Chapter eight discusses high speed metal semiconductor field effect transistors.

This textbook book discusses fundamental semiconductor physics of devices and on-chip interconnections and links these concepts to engineering applications and case studies of computer chips. The book is organized in three parts. The first part deals with the representation of information and computation. The second part covers semiconductor device physics within the context of computation. The third part reviews chip design and semiconductor fabrication. The book includes relevant equations, with the aim of closing the gap in the existing literature with actual case studies and engineering applications. Examples are provided in each chapter to illustrate physical and electrical concepts through the use of high-performance silicon technologies.

An introduction to the fundamentals of semiconductor physics and engineering This book discusses fundamental semiconductor physics of devices and on-chip interconnections for physicists and links these concepts to engineering applications and case studies of computer chips. The book is organized in three parts. The first part deals with the representation of information and computation. The second part covers semiconductor device physics within the context of computation. The third part reviews chip design and semiconductor fabrication. The book includes relevant equations, with the aim of closing the gap in the existing literature with actual case studies and engineering applications. Examples are provided in each chapter to illustrate physical and electrical concepts through the use of high-performance silicon technologies. Introductory Semiconductor Device Physics for Chip Design and Manufacturing: Provides physical descriptions and illustrations with data visualizations to facilitate intuitive understanding of semiconductor physics, devices and on-chip interconnections Blends theoretical physics treatment with engineering applications and real case studies for manufactured chips Presents complementary-metal-oxide-semiconductor (CMOS) transistors in high-performance server microprocessors with static CMOS combinational digital circuit design examples Offers a rich array of student problem sets, mid-term exams, and final exams with a glossary at the end of the book M. Y. Lanzerotti, PhD, has over 15 years of engineering experience in designing integrated circuits for high-performance server chips and aerospace applications. Dr. Lanzerotti is Assistant Professor of Physics at Augsburg College and previously held positions as Associate Professor of Computer Engineering at Air Force Institute of Technology, Instructor at Harvard Summer School, Visiting Faculty Fellow at Pacific Lutheran University, Visiting Faculty Fellow at Sapienza University of Rome, and Research Staff Member at IBM Thomas J. Watson Research Center. This book is inspired from Dr. Lanzerotti’s course, “Introductory Semiconductor Device Physics for Chip Design and Manufacturing,” at Harvard Summer School. Dr. Lanzerotti holds physics degrees from Harvard College, the University of Cambridge, and Cornell University. Dr. Lanzerotti holds four U.S. patents, was awarded an IEEE Technical Innovation Award in 2007 and an IBM Outstanding Research Contribution Award in 1998, and was Editor-in-Chief of the IEEE Solid-State Circuits Society Magazine.

An introduction to the fundamentals of semiconductor physics and engineering This book discusses fundamental semiconductor physics of devices and on-chip interconnections for physicists and links these concepts to engineering applications and case studies of computer chips. The book is organized in three parts. The first part deals with the representation of information and computation. The second part covers semiconductor device physics within the context of computation. The third part reviews chip design and semiconductor fabrication. The book includes relevant equations, with the aim of closing the gap in the existing literature with actual case studies and engineering applications. Examples are provided in each chapter to illustrate physical and electrical concepts through the use of high-performance silicon technologies. Introductory Semiconductor Device Physics for Chip Design and Manufacturing: Provides physical descriptions and illustrations with data visualizations to facilitate intuitive understanding of semiconductor physics, devices and on-chip interconnections Blends theoretical physics treatment with engineering applications and real case studies for manufactured chips Presents complementary-metal-oxide-semiconductor (CMOS) transistors in high-performance server microprocessors with static CMOS combinational digital circuit design examples Offers a rich array of student problem sets, mid-term exams, and final exams with a glossary at the end of the book M. Y. Lanzerotti, PhD, has over 15 years of engineering experience in designing integrated circuits for high-performance server chips and aerospace applications. Dr. Lanzerotti is Assistant Professor of Physics at Augsburg College and previously held positions as Associate Professor of Computer Engineering at Air Force Institute of Technology, Instructor at Harvard Summer School, Visiting Faculty Fellow at Pacific Lutheran University, Visiting Faculty Fellow at Sapienza University of Rome, and Research Staff Member at IBM Thomas J. Watson Research Center. This book is inspired from Dr. Lanzerotti’s course, “Introductory Semiconductor Device Physics for Chip Design and Manufacturing,” at Harvard Summer School. Dr. Lanzerotti holds physics degrees from Harvard College, the University of Cambridge, and Cornell University. Dr. Lanzerotti holds four U.S. patents, was awarded an IEEE Technical Innovation Award in 2007 and an IBM Outstanding Research Contribution Award in 1998, and was Editor-in-Chief of the IEEE Solid-State Circuits Society Magazine.

This textbook provides a theoretical background for contemporary trends in solid-state theory and semiconductor device physics. It discusses advanced methods of quantum mechanics and field theory and is therefore primarily intended for graduate students in theoretical and experimental physics who have already studied electrodynamics, statistical physics, and quantum mechanics. It also relates solid-state physics fundamentals to semiconductor device applications and includes auxiliary results from mathematics and quantum mechanics, making the book useful also for graduate students in electrical engineering and material science. Key Features: Explores concepts common in textbooks on semiconductors, in addition to topics not included in similar books currently available on the market, such as the topology of Hilbert space in crystals Contains the latest research and developments in the field Written in an accessible yet rigorous manner

This book on solid state physics has been written with an emphasis on recent developments in quantum many-body physics approaches. It starts by covering the classical theory of solids and electrons and describes how this classical model has failed. The authors then present the quantum mechanical model of electrons in a lattice and they also discuss the theory of conductivity. Extensive reviews on the topic are provided in a compact manner so that any non-specialist can follow from the beginning.The authors cover the system of magnetism in a similar way and various problems in magnetic materials are discussed. The book also discusses the Ising chain, the Heisenberg model, the Kondo effect and superconductivity, amongst other relevant topics.In the final chapter, the authors present some works related to contemporary research topics, such as quantum entanglement in many-body systems and quantum simulations. They also include a short review of some of the possible applications of solid state quantum information in biological systems.

This textbook provides a theoretical background for contemporary trends in solid-state theory and semiconductor device physics. It discusses advanced methods of quantum mechanics and field theory and is therefore primarily intended for graduate students in theoretical and experimental physics who have already studied electrodynamics, statistical physics, and quantum mechanics. It also relates solid-state physics fundamentals to semiconductor device applications and includes auxiliary results from mathematics and quantum mechanics, making the book useful also for graduate students in electrical engineering and material science. Key Features: Explores concepts common in textbooks on semiconductors, in addition to topics not included in similar books currently available on the market, such as the topology of Hilbert space in crystals Contains the latest research and developments in the field Written in an accessible yet rigorous manner

This book examines in detail the new physical principles and technological approaches that make high-speed transistors possible. It includes discussions of maximum drift velocity in semiconductors, hot-electron transistors, and high-speed devices and integrated circuits to provide a comprehensive overview for physicists, engineers, and students who wish to apply this technology to computer and microwave development.