Junctionless Field Effect Transistors

A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.

A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.

In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.

Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.

A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.