Lateral Power Transistors In Integrated Circuits

The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.

Design of Power Management Integrated Circuits Comprehensive resource on power management ICs affording new levels of functionality and applications with cost reduction in various fields Design of Power Management Integrated Circuits is a comprehensive reference for power management IC design, covering the circuit design of main power management circuits like linear and switched-mode voltage regulators, along with sub-circuits such as power switches, gate drivers and their supply, level shifters, the error amplifier, current sensing, and control loop design. Circuits for protection and diagnostics, as well as aspects of the physical design like lateral and vertical power delivery, pin-out, floor planning, grounding/supply guidelines, and packaging, are also addressed. A full chapter is dedicated to the design of integrated passives. The text illustrates the application of power management integrated circuits (PMIC) to growth areas like computing, the Internet of Things, mobility, and renewable energy. Includes numerous real-world examples, case studies, and exercises illustrating key design concepts and techniques. Offering a unique insight into this rapidly evolving technology through the author’s experience developing PMICs in both the industrial and academic environment, Design of Power Management Integrated Circuits includes information on: Capacitive, inductive and hybrid DC-DC converters and their essential circuit blocks, covering error amplifiers, comparators, and ramp generators Sensing, protection, and diagnostics, covering thermal protection, inductive loads and clamping structures, under-voltage, reference and power-on reset generation Integrated MOS, MOM and MIM capacitors, integrated inductors Control loop design and PWM generation ensuring stability and fast transient response; subharmonic oscillations in current mode control (analysis and circuit design for slope compensation) DC behavior and DC-related circuit design, covering power efficiency, line and load regulation, error amplifier, dropout, and power transistor sizing Commonly used level shifters (including sizing rules) and cascaded (tapered) driver sizing and optimization guidelines Optimizing the physical design considering packaging, floor planning, EMI, pinout, PCB design and thermal design Design of Power Management Integrated Circuits is an essential resource on the subject for circuit designers/IC designers, system engineers, and application engineers, along with advanced undergraduate students and graduate students in related programs of study.

From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.

This book provides a survey of the state of the art of technology and future trends in the new family of Smart Power ICs and describes design and applications in a variety of fields ranging from automotive to telecommunications, reliability evaluation and qualification procedures. The book is a valuable source of information and reference for both power IC design specialists and to all those concerned with applications, the development of digital circuits and with system architecture.

Power Management Integrated Circuits and Technologies delivers a modern treatise on mixed-signal integrated circuit design for power management. Comprised of chapters authored by leading researchers from industry and academia, this definitive text: Describes circuit- and architectural-level innovations that meet advanced power and speed capabilities Explores hybrid inductive-capacitive converters for wide-range dynamic voltage scaling Presents innovative control techniques for single inductor dual output (SIDO) and single inductor multiple output (SIMO) converters Discusses cutting-edge design techniques including switching converters for analog/RF loads Compares the use of GaAs pHEMTs to CMOS devices for efficient high-frequency switching converters Thus, Power Management Integrated Circuits and Technologies provides comprehensive, state-of-the-art coverage of this exciting and emerging field of engineering.

From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.

This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools. The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis. Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific protections.