Modeling Simulation And Design Techniques For High Density Complex Photonic Integrated Devices And Circuits Microform

Finally, the space mapping (SM) technique is introduced for the design and modeling of optical devices. This technique provides a unique way to let computational intensive models, such as finite difference time domain (FDTD) method, play an important role in design optimization and modeling. Remarkable designs have been achieved in only several FDTD simulations.

This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.

This new resource presents the concepts, technologies, and design techniques for devices based on the electro-optic effect in lithium niobate. It bridges from the theory of photonics and electro-optics, to the practice of electro-optic device design and application. There is an emphasis on practical analysis using modern modeling tools. The book explains the fundamental physics of the electro-optic effect, classes of electro-optic materials, electro-optic properties of lithium niobate, and the physics and uses of ferroelectric domain inversion. Readers are also provided with the principles of operation, performance measures, and design considerations for the most common types of electro-optic devices: beam deflectors, intensity and phase modulators, including quasi-phased matched devices.

This book consists of contributions given in honor of Wolfgang J.R. Hoefer. Space and time discretizing time domain methods for electromagnetic full-wave simulation have emerged as key numerical methods in computational electromagnetics. Time domain methods are versatile and can be applied to the solution of a wide range of electromagnetic field problems. Computing the response of an electromagnetic structure to an impulsive excitation localized in space and time provides a comprehensive characterization of the electromagnetic properties of the structure in a wide frequency range. The most important methods are the Finite Difference Time Domain (FDTD) and the Transmission Line Matrix (TLM) methods. The contributions represent the state of the art in dealing with time domain methods in modern engineering electrodynamics for electromagnetic modeling in general, the Transmission Line Matrix (TLM) method, the application of network concepts to electromagnetic field modeling, circuit and system applications and, finally, with broadband devices, systems and measurement techniques.

The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

Miniaturization and high precision are rapidly becoming a requirement for many industrial processes and products. As a result, there is greater interest in the use of laser microfabrication technology to achieve these goals. This book composed of 16 chapters covers all the topics of laser precision processing from fundamental aspects to industrial applications to both inorganic and biological materials. It reviews the sate of the art of research and technological development in the area of laser processing.

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.