Morphological Organization In Epitaxial Growth And Removal

This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories — the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field. Contents:Theoretical Basis:Study of Strain and Temperature Dependence of Metal Epitaxy (C Ratsch et al.)Atomistic Simulation Methods (A F Voter)Submonolayer Nucleation and Growth of 2D Islands and Multilayer Mound Formation During Homoepitaxy (J W Evans & M C Bartelt)Equilibrium Shape of a Coherent Epitaxial Cluster (C Duport et al.)Dynamic Scaling in Epitaxial Growth (S Das Sarma)Scaling and Crossovers in Models for Thin Film Growth (A Pimpinelli et al.)Quantum Effect in Metal Overlayers on Semiconductor Substrates (J-H Cho et al.)Semiconductor-on-Semiconductor Growth:Self-Organized Island Arrays in SiGe/Si Multilayers (C Teichert et al.)Morphological Evolution of Strained Semiconductor Films (D E Jesson)Large Scale Surface Evolution During MBE Growth: Mounding (C Orme et al.)Growth Structures of Silicon Homoepitaxy by Chemical Vapor Deposition (H Rauscher & R J Behm)Metal-on-Metal Growth:Two-Dimensional Island Shapes (T Michely & G Comsa)Ramified Growth in Metal on Metal Epitaxy (R Q Hwang)Morphology and Energy Barriers in Homoepitaxial Growth and Coarsening: A Case Study for Cu(100) (J F Wendelken et al.)The Concept of Two Mobilities for Growth Manipulation (G Rosenfeld et al.)Tailoring Epitaxial Growth of Low-Dimensional Magnetic Heterostructures by Means of Surfactants (J J de Miguel et al.)Cluster Diffusion, Coalescence and Coarsening in Metal(100) Homoepitaxial Systems (P A Thiel & J W Evans)Metal-on-Semiconductor Growth:Ag on Si-Surfaces: From Insulator to Metal (M H von Hoegen et al.)Metal on Semiconductor Growth at Low Temperatures (M C Tringides)Growing Atomically Flat Metal Films on Semiconductor Substrates (C-K Shih)Removal:Spontaneous Halogen Etching of Si (J H Weaver & C M Aldao)Surface Morphology of Ion Bombarded Si(001) and Ge(001) Surfaces (H J W Zandvliet & I S T Tsong) Readership: Researchers and graduate students in solid state physics, materials science and engineering. Keywords:

First to review nanoscale self-assembly employing such a wide variety of methods Covers a wide variety physical, chemical and biological systems, phenomena, and applications First overviews of nanotube biotechnology and bimetallic nanoparticles

Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.

Crystal growth far from thermodynamic equilibrium is nothing but homoepitaxy - thin film growth on a crystalline substrate of the same material. Because of the absence of misfit effects, homoepitaxy is an ideal playground to study growth kinetics in its pure form. Despite its conceptual simplicity, homoepitaxy gives rise to a wide range of patterns. This book explains the formation of such patterns in terms of elementary atomic processes, using the well-studied Pt/Pt(111) system as a reference point and a large number of Scanning Tunneling Microscopy images for visualization. Topics include surface diffusion, nucleation theory, island shapes, mound formation and coarsening, and layer-by-layer growth. A separate chapter is dedicated to describing the main experimental and theoretical methods.

Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and processing germanium structures, including chemical and physical vapor deposition, condensation approaches and chemical etching. The third and largest part gives a broad overview of the applications of integrated germanium technology: waveguides, photodetectors, modulators, ring resonators, transistors and, prominently, light-emitting devices. An invaluable one-stop resource for both researchers and developers.

This book contains keynote lectures which have been delivered at the 3rd Porquerolles' School on Surface Science, SIR2000 (Surfaces-Interfaces-Relaxation). The aim of this school was to review the main concepts necessary to understand the role of interfacial stress, strain and relaxation in crystal growth by heteroepitaxy. By bringing together scientists from various fields (physics, chemistry, materials science and engineering) which daily use complementary methodological approaches (experiment, theory, modelization), the school allowed to offer 11 multidisciplinary courses. This book addresses the state of art of stress in epitaxial materials, it describes the various methods to measure the atomic displacement and stress fields, it reviews the spectroscopic methods necessary to map the interface chemistry, it details the theoretical methods and concepts which are needed to predict them and it questions the fact that stress and relaxation can induce specific properties in magnetism, catalysis, electron transport and so on. The field of stress and strain in heteroepitaxy has know large developments during the last ten years. New techniques have been used to set up new devices in which functionalities are obtained through structuration at a nanometer scale. Large-scale integration and reduced dimensions are the key factors to optimize the achievements of these devices. Already used in industry (quantum wells, magnetic sensors), these devices are obtained by molecular beam epitaxy, sputtering or pulsed laser deposition. Their reduced dimensionality increased the number of surfaces and interfaces, the role of which has to be precised. Experimentalists try now to associate materials having very different crystal structure and chemical composition. The elastic stress stored in the device can induce various phenomena which have to be evaluated, understood and predicted. The book intends also to show that many questions are still in debate.

The first reference of its kind in the rapidly emerging field of computational approachs to materials research, this is a compendium of perspective-providing and topical articles written to inform students and non-specialists of the current status and capabilities of modelling and simulation. From the standpoint of methodology, the development follows a multiscale approach with emphasis on electronic-structure, atomistic, and mesoscale methods, as well as mathematical analysis and rate processes. Basic models are treated across traditional disciplines, not only in the discussion of methods but also in chapters on crystal defects, microstructure, fluids, polymers and soft matter. Written by authors who are actively participating in the current development, this collection of 150 articles has the breadth and depth to be a major contributor toward defining the field of computational materials. In addition, there are 40 commentaries by highly respected researchers, presenting various views that should interest the future generations of the community. Subject Editors: Martin Bazant, MIT; Bruce Boghosian, Tufts University; Richard Catlow, Royal Institution; Long-Qing Chen, Pennsylvania State University; William Curtin, Brown University; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory; Nicolas Hadjiconstantinou, MIT; Mark F. Horstemeyer, Mississippi State University; Efthimios Kaxiras, Harvard University; L. Mahadevan, Harvard University; Dimitrios Maroudas, University of Massachusetts; Nicola Marzari, MIT; Horia Metiu, University of California Santa Barbara; Gregory C. Rutledge, MIT; David J. Srolovitz, Princeton University; Bernhardt L. Trout, MIT; Dieter Wolf, Argonne National Laboratory.

The main focus of the book are the physical mechanisms behind the spontaneous formation of ordered nanostructures at semiconductor surfaces. These mechanisms are at the root of recent breakthroughs in advanced nanotechnology of quantum-wire and quantum-dot fabrication. Generic theoretical models are presented addressing formation of all basic types of nanostructures, including periodically faceted surfaces, arrays of step-bunches of equal heights and single- and multi-sheet arrays of both 2- and 3-D strained islands. Decisive experiments on both structural and optical characterization of nanostructures are discussed to verify theoretical models and link them to practical examples.