Nonlinear Design Fets And Hemts

Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.

This newly and thoroughly revised edition of the 1988 Artech House classic offers you a comprehensive, up-to-date treatment of nonlinear microwave and RF circuits. It gives you a current, in-depth understanding of the theory of nonlinear circuit analysis with a focus on Volterra-series and harmonic-balance methods. You get practical guidance in designing nonlinear circuits and modeling solid-state devices for nonlinear circuit analysis by computer. Moreover, you learn how characteristics of such models affect the analysis of these circuits. Critical new topics include microwave heterojunction bipolar transistors (HBTs), heterojunction FETs (HEMTs), silicon MOSFETs, modern IC design approaches, new methods of harmonic-balance analysis, multitone analysis methods, Fourier methods for multitone problems, and artificial frequency mapping. What's more, the second edition has been updated to include discussions on nonlinear analysis of oscillators and design issues relating to RF and wireless technology. More than 120 illustrations support key topics throughout the book.

This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.

This exciting new resource describes a unified approach to non-linear analysis and design involving compound semiconductor field effect transistors (FETs) and heterojunction field effect transistors (HFETs). It provides an understanding of the characterization and analysis devices made by non-linear design, highlighting the relationship between design and performance. The rarely acknowledged errors inherent in extracting capacitive and conductance elements, as required by all circuit models, from measurements made at the terminals of a device is given, and how these limitations and restrictions often yield workable results is demonstrated. Under large-signal conditions, the operating point may shift due to self-biasing, and the circuit simulator must account for the changed RF characteristics accordingly. Examples of how these reconstructed curves compare with pulsed measurements are given. Implementation in Harmonic Balance and Time-Domain simulators is outlined, including start-up transients and demonstration of long-term transiens. The book offers understanding of the relationship between device fabrication technology and circuit performance. Taking a practical approach to the physics of compact devices, the book will be valuable to microwave circuit designers and fabricators.

Design techniques for nonlinear microwave circuits are much less developed than for linear microwave circuits. Until now there has been no up-to-date text available in this area. Current titles in this field are considered outdated and tend to focus on analysis, failing to adequately address design and measurement aspects. Giannini and Leuzzi provide the theoretical background to non-linear microwave circuits before going on to discuss the practical design and measurement of non-linear circuits and components. Non-linear Microwave Circuit Design reviews all of the established analysis and characterisation techniques available and provides detailed coverage of key modelling methods. Practical examples are used throughout the text to emphasise the design and application focus of the book. * Provides a unique, design-focused, coverage of non-linear microwave circuits * Covers the fundamental properties of nonlinear circuits and methods for device modelling * Outlines non-linear measurement techniques and characterisation of active devices * Reviews available design methodologies for non-linear power amplifiers and details advanced software modelling tools * Provides the first detailed treatment of non-linear frequency multipliers, mixers and oscillators * Focuses on the application potential of non-linear components Practicing engineers and circuit designers working in microwave and communications engineering and designing new applications, as well as senior undergraduates, graduate students and researchers in microwave and communications engineering and their libraries will find this a highly rewarding read.

A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.