Optoelectronic Circuits In Nanometer Cmos Technology

This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical sensors.

Explains the circuit design of silicon optoelectronic integrated circuits (OEICs), which are central to advances in wireless and wired telecommunications. The essential features of optical absorption are summarized, as is the device physics of photodetectors and their integration in modern bipolar, CMOS, and BiCMOS technologies. This information provides the basis for understanding the underlying mechanisms of the OEICs described in the main part of the book. In order to cover the topic comprehensively, Silicon Optoelectronic Integrated Circuits presents detailed descriptions of many OEICs for a wide variety of applications from various optical sensors, smart sensors, 3D-cameras, and optical storage systems (DVD) to fiber receivers in deep-sub-μm CMOS. Numerous detailed illustrations help to elucidate the material.

This book covers the complete spectrum of the fundamentals of clocked, regenerative comparators, their state-of-the-art, advanced CMOS technologies, innovative comparators inclusive circuit aspects, their characterization and properties. Starting from the basics of comparators and the transistor characteristics in nanometer CMOS, seven high-performance comparators developed by the authors in 120nm and 65nm CMOS are described extensively. Methods and measurement circuits for the characterization of advanced comparators are introduced. A synthesis of the largely differing aspects of demands on modern comparators and the properties of devices being available in nanometer CMOS, which are posed by the so-called nanometer hell of physics, is accomplished. The book summarizes the state of the art in integrated comparators. Advanced measurement circuits for characterization will be introduced as well as the method of characterization by bit-error analysis usually being used for characterization of optical receivers. The book is compact, and the graphical quality of the illustrations is outstanding. This book is written for engineers and researchers in industry as well as scientists and Ph.D students at universities. It is also recommendable to graduate students specializing on nanoelectronics and microelectronics or circuit design.

This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.

This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

This book brings together two broad themes that have generated a great deal of interest and excitement in the scientific and technical community in the last 100 years or so: quantum tunnelling and nonlinear dynamical systems. It applies these themes to nanostructured solid state heterostructures operating at room temperature to gain insight into novel photonic devices, systems and applications.

This book highlights the fundamental principles of optical fiber technology required for understanding modern high-capacity lightwave telecom networks. Such networks have become an indispensable part of society with applications ranging from simple web browsing to critical healthcare diagnosis and cloud computing. Since users expect these services to always be available, careful engineering is required in all technologies ranging from component development to network operations. To achieve this understanding, this book first presents a comprehensive treatment of various optical fiber structures and diverse photonic components used in optical fiber networks. Following this discussion are the fundamental design principles of digital and analog optical fiber transmission links. The concluding chapters present the architectures and performance characteristics of optical networks.

CMOS technologies account for almost 90% of all integrated circuits (ICs). This book provides an essential introduction to nanometer CMOS ICs. The contents of this book are based upon several previous publications and editions entitled 'MOS ICs' and 'Deep-Submicron CMOS ICs'. Nanometer CMOS ICs is fully updated and is not just a copy-and-paste of previous material. It includes aspects of scaling up to and beyond 32nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. In contrast to other works on this topic, the book explores all associated disciplines of nanometer CMOS ICs, including physics, design, technology, yield, packaging, less-power design, variability, reliability and signal integrity. Finally it also includes extensive discussions on the trends and challenges for further scaling. The text is based upon in-house Philips and NXP Semiconductors courseware, which, to date, has been completed by more than 3000 engineers working in a large variety of related disciplines: architecture, design, test, process, packaging, failure analysis and software. Carefully structured and enriched by in-depth exercises, hundreds of colour figures and photographs and many references, the book is well-suited for the purpose of self-study.