Oxide Thin Film Transistors

Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.

Semiconducting metal oxide thin-film transistors (TFTs) are promising candidates for functional electronic devices. This reference text covers the latest developments in the field, including the design, materials characteristics, device operation principles, specialised device applications and mechanisms, including the latest semiconducting TFT technologies. The book introduces the concepts and working mechanisms of semiconducting metal oxide TFTs, with a focus on metal oxide thin films that have desirable electrical and optical properties. The relationship between material properties and device performance is analysed, and materials and device challenges, as well as possible strategies, are discussed.

Transparent flexible electronics is an emerging technology which makes use of wide band gap semiconductors that can be processed at low temperatures on glass or plastic substrates. Electronic systems that cover large area and curved surfaces together with transparency bring the possibility of numerous applications that are outside the scope of rigid wafer based electronics. Flexible electronics, electronic textiles, a wearable wellness system, and sensory skin are some of the applications of flexible electronics. The key factor in the realization of transparent electronics is the development of high performance fully transparent thin film transistors. Thin film transistors (TFTs) based on transparent conducting amorphous oxide semiconductors (TAOS) such as InGaZnO (IGZO), zinc tin oxide (ZTO), zinc indium tin oxide (ZITO), etc. provide additional functionalities like transparency, high field effect mobility and potential for room temperature processing. The performance of these TAOS based TFTs are superior to their silicon (a-Si:H TFTs) and organic TFTs.Though there are monographs and books on a-Si:H TFTs and organic TFTs, a book on TAOS based TFTs is rare. This book introduces the work of graduate students and beginners to the field of amorphous semiconductors. The mass production of this kind of TFTs on large area substrates involves the complications associated with controlling the composition of oxide compound semiconductor thin film material. Pulsed laser deposition allows for the growth of an oxide semiconductor in a very high oxygen rich environment while co-sputtering is an effective technique for the growth of a multicomponent film and to control the film chemical composition in a systematic and easy way. These manufacturing aspects will be of interest to those working in the industry. The review on the n channel, p channel TFTs, and the detailed description for the extraction of various TFT parameters like the threshold voltage, field effect mobility, sub threshold slope and on-off ratio, etc. will be ready for those working in the field of transparent electronics.

Semiconducting metal oxide thin-film transistors (TFTs) are promising candidates for functional electronic devices and have attracted considerable attention due to their superior electrical performance, high transparency, excellent stability and uniformity. The book introduces the concepts and working mechanisms of semiconducting metal oxide TFTs, with a focus on metal oxide thin films that have desirable electrical and optical properties. The relationship between material properties and device performance is analysed, and materials and device challenges, as well as possible strategies, are included to promote the commercial translation of metal oxide TFT-based optoelectronic devices. Valuable as a reference text for researchers, and graduate students working in the fields of device physics, semiconducting materials and flexible electronics, the book is also essential reading for engineers working with semiconducting metal oxide TFTs in industry, particularly display and memory technologies. Key Features  First book to focus on the applications of semiconducting metal oxide TFTs Covers the latest technologies in the field, including displays, sensors, logic operations, data storage and neuromorphic computing for artificial intelligence Analyses the relationship between material properties and device performance Includes possible strategies to overcome materials and device challenges to promote the commercial translation of the technology Includes video demonstrations to help readers understand how the devices work

Covering both TFT technologies, and the theory and practice of circuit design, this book equips engineers with the technical knowledge and hands-on skills needed to make circuits on foil with organic or metal oxide based TFTs for applications such as flexible displays and RFID. It provides readers with a solid theoretical background and gives an overview of current TFT technologies including device architecture, typical parameters, and a theoretical framework for comparing different logical families. Concrete, real-world design cases, such as RFID circuits, and organic and metal oxide TFT-based 8-bit microprocessors, enable readers to grasp the practical potential of these design techniques and how they can be applied. This is an essential guide for students and professionals who need to make better transistors on foil.

AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Symposium R, "Oxide Semiconductors" was held December 1-6 at the 2013 MRS Fall Meeting in Boston, Massachusetts. Oxide semiconductors are poised to take a more active role in modern electronics, particularly in the field of thin film transistors. While many advances have been made in terms of our understanding of fundamental optical and electronic characteristics, there remain many questions in terms of defects, doping, and optimal growth/synthesis conditions. This symposium proceedings volume represents recent advances in growth and characterization of a number of different oxide semiconductors, as well as device fabrication.