Quantum Processes In Semiconductors

This book sets out the fundamental quantum processes that are important in the physics and technology of semiconductors in a relatively informal style that graduate students will find very attractive. The fifth edition includes new chapters that expand the coverage of semiconductor physics relevant to its accompanying technology. One of the problems encountered in high-power transistors is the excessive production of phonons and the first new chapter examines the hot-phonon phenomenon and the lifetime of polar optical phonons in the nitrides. In the burgeoning field of spintronics a crucial parameter is the lifetime of a spin-polarised electron gas, and this is treated in detail in the second of the new chapters. The third new chapter moves from the treatment of bulk properties to the unavoidable effects of the spatial limitation of the semiconductor, and to the influence of surface states and the pinning of the Fermi level. As with previous editions the text restricts its attention to bulk semiconductors. The account progresses from quantum processes describable by density matrices, through the semi-classical Boltzmann equation and its solutions, to the drift-diffusion description of space-charge waves, the latter appearing in the contexts of negative differential resistance, acoustoelectric and recombination instabilities. Besides being a useful reference for workers in the field, this book will be a valuable text for graduate courses.

This book encapsulates the fundamental quantum processes of importance to the physics and technology of semiconductors. This new edition is expanded by the addition of a new chapter on Phonon processes. The author has also made additions to the existing chapters. Besides being a useful reference for workers in the field this book will be a valuable text for postgraduate courses.

This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.

Throughout their college career, most engineering students have done problems and studies that are basically situated in the classical world. Some may have taken quantum mechanics as their chosen field of study. This book moves beyond the basics to highlight the full quantum mechanical nature of the transport of carriers through nanoelectronic structures. The book is unique in that addresses quantum transport only in the materials that are of interest to microelectronics—semiconductors, with their variable densities and effective masses. The author develops Green’s functions starting from equilibrium Green’s functions and going through modern time-dependent approaches to non-equilibrium Green’s functions, introduces relativistic bands for graphene and topological insulators and discusses the quantum transport changes that these bands induce, and discusses applications such as weak localization and phase breaking processes, resonant tunneling diodes, single-electron tunneling, and entanglement. Furthermore, he also explains modern ensemble Monte Carlo approaches to simulation of various approaches to quantum transport and the hydrodynamic approaches to quantum transport. All in all, the book describes all approaches to quantum transport in semiconductors, thus becoming an essential textbook for advanced graduate students in electrical engineering or physics.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.