Silicon Carbide And Related Materials 2017

This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices. Silicon Carbide, Semiconductors, Bulk and Epitaxial Growth, Surface Defects, Properties, Processing, MOS and MOSFET Structures, Power Devices, Circuits, Applications Materials Science.

ICSCRM 2017 Selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA

Selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece

Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019) Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan

The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 283 papers are grouped as follows: Chapter 1: SiC Bulk Growth; Chapter 2: SiC Epitaxial Growth; Chapter 3: Physical Properties and Characterization of SiC; Chapter 4: Processing of SiC; Chapter 5: Devices and Circuits; Chapter 6: Related Materials.

This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene.The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.The papers are grouped as follows:Chapter 1: SiC GrowthChapter 2: SiC Theory and CharacterizationChapter 3: SiC ProcessingChapter 4: SiC DevicesChapter 5: Related Materials Silicon Carbide, Wide Bandgap Semiconductor, Bulk Growth of SIC, Epitaxial Growth of SIC, Processing of SIC, SIC Devices, Power Electronics, MOS, Characterization, Graphene, III-Nitrides Materials Science.