Structural Optical And Spectral Behaviour Of Inas Based Quantum Dot Heterostructures

This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.

Special topic volume with invited peer-reviewed papers only

Selected peer-reviewed extended articles based on abstracts presented at the 2nd International Conference on Semiconductor Materials and Technology (ICoSeMT 2021) Aggregated Book

This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.

High magnetic fields have, for a long time, been an important tool in the investigation of the electronic structure of semiconductors. In recent yearsstudies of heterostructures and superlattices have predominated, and this emphasis is reflected in these proceedings. The contributions concentrate on experiments using transport and optical methods, but recent theoretical developments are also covered. Special attention is paid to the quantum Hall effect, including the problem of edge currents, the influence of contacts, and Wigner condensation in the fractional quantum Hall effect regime. The 27 invited contributions by renowned expertsprovide an excellent survey of the field that is complemented by numerous contributed papers.