Transient Electro Thermal Modeling Of Bipolar Power Semiconductor Devices

This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.

This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.

Power Electrical Systems are an indespensable feature of the exploitation and diagnostics of elecrical machines and energy resources. The Volume presents extended and peer reviewed papers from the international conference on PES in Barcelona, 2014. Among the topics dealt with are: electrical machines design, voltage and control, automotive power drives, electromagnetic compatibility, monitoring and diagnostics, renewable energy systems. The International Conference on Power Electrical Systems (PES) is a forum for researchers and specialists in different fields of electrical engineering related to Hybrid Renewable Energy Systems (HRES); Power Electronics in Renewable Energy Systems; Topologies and Control of Power Electronics Converters Used in Renewable Energy Systems; Electric machines modelling and control; Automotive electrical systems; Electric machine design; Monitoring and diagnostics; Special machines; Power systems; Power electronic converters; Renewable energy systems; Variable speed drives; Electromagnetic compatibility; Variable speed generating systems; Transformers.

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.

Computers play an important role in the analyzing and designing of modern DC-DC power converters. This book shows how the widely used analysis techniques of averaging and linearization can be applied to DC-DC converters with the aid of computers. Obtained dynamical equations may then be used for control design. The book is composed of two chapters. Chapter 1 focuses on the extraction of control-to-output transfer function. A second-order converter (a buck converter) and a fourth-order converter (a Zeta converter) are studied as illustrative examples in this chapter. Both ready-to-use software packages, such as PLECS® and MATLAB® programming, are used throught this chapter. The input/output characteristics of DC-DC converters are the object of considerations in Chapter 2. Calculation of input/output impedance is done with the aid of MATLAB® programming in this chapter. The buck, buck-boost, and boost converter are the most popular types of DC-DC converters and used as illustrative examples in this chapter. This book can be a good reference for researchers involved in DC-DC converters dynamics and control.

DC-DC converters have many applications in the modern world. They provide the required power to the communication backbones, they are used in digital devices like laptops and cell phones, and they have widespread applications in electric cars, to just name a few. DC-DC converters require negative feedback to provide a suitable output voltage or current for the load. Obtaining a stable output voltage or current in presence of disturbances such as: input voltage changes and/or output load changes seems impossible without some form of control. This book tries to train the art of controller design for DC-DC converters. Chapter 1 introduces the DC-DC converters briefly. It is assumed that the reader has the basic knowledge of DC-DC converter (i.e., a basic course in power electronics). The reader learns the disadvantages of open loop control in Chapter 2. Simulation of DC-DC converters with the aid of Simulink® is discussed in this chapter as well. Extracting the dynamic models of DC-DC converters is studied in Chapter 3. We show how MATLAB® and a software named KUCA can be used to do the cumbersome and error-prone process of modeling automatically. Obtaining the transfer functions using PSIM® is studied as well. These days, softwares are an integral part of engineering sciences. Control engineering is not an exception by any means. Keeping this in mind, we design the controllers using MATLAB® in Chapter 4. Finally, references are provided at the end of each chapter to suggest more information for an interested reader. The intended audiencies for this book are practice engineers and academians.

The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.