Transient Electro Thermal Modeling On Power Semiconductor Devices

This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.

This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.

The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.

With increasing power levels and power densities in electronics systems, thermal issues are becoming more and more critical. The elevated temperatures result in changing electrical system parameters, changing the operation of devices, and sometimes even the destruction of devices. To prevent this, the thermal behavior has to be considered in the design phase. This can be done with thermal end electro-thermal design and simulation tools. This Special Issue of Energies, edited by two well-known experts of the field, Prof. Marta Rencz, Budapest University of Technology and Economics, and by Prof. Lorenzo Codecasa, Politecnico di Milano, collects twelve papers carefully selected for the representation of the latest results in thermal and electro-thermal system simulation. These contributions present a good survey of the latest results in one of the most topical areas in the field of electronics: The thermal and electro-thermal simulation of electronic components and systems. Several papers of this issue are extended versions of papers presented at the THERMINIC 2018 Workshop, held in Stockholm in the fall of 2018. The papers presented here deal with modeling and simulation of state-of-the-art applications that are highly critical from the thermal point of view, and around which there is great research activity in both industry and academia. Contributions covered the thermal simulation of electronic packages, electro-thermal advanced modeling in power electronics, multi-physics modeling and simulation of LEDs, and the characterization of interface materials, among other subjects.

This book is devoted to the latest advances in the area of electrothermal modelling of electronic components and networks. It contains eight sections by different teams of authors. These sections contain the results of: (a) electro-thermal simulations of SiC power MOSFETs using a SPICE-like simulation program; (b) modelling thermal properties of inductors taking into account the influence of the core volume on the efficiency of heat removal; (c) investigations into the problem of inserting a temperature sensor in the neighbourhood of a chip to monitor its junction temperature; (d) computations of the internal temperature of power LEDs situated in modules containing multiple-power LEDs, taking into account both self-heating in each power LED and mutual thermal couplings between each diode; (e) analyses of DC-DC converters using the electrothermal averaged model of the diode–transistor switch, including an IGBT and a rapid-switching diode; (f) electrothermal modelling of SiC power BJTs; (g) analysis of the efficiency of selected algorithms used for solving heat transfer problems at nanoscale; (h) analysis related to thermal simulation of the test structure dedicated to heat-diffusion investigation at the nanoscale.

This book analyzes the thermal characteristics of power electronic devices (PEDs) with a focus on those used in wind and solar energy systems. The authors focus on the devices used in such applications, for example boost converters and inverters under different operating conditions. The book explains in detail finite element modeling techniques, setting up measuring systems, data analysis, and PEDs’ lifetime calculations. It is appropriate reading for graduate students and researchers who focus on the design and reliability of power electronic devices.

Power Electrical Systems are an indespensable feature of the exploitation and diagnostics of elecrical machines and energy resources. The Volume presents extended and peer reviewed papers from the international conference on PES in Barcelona, 2014. Among the topics dealt with are: electrical machines design, voltage and control, automotive power drives, electromagnetic compatibility, monitoring and diagnostics, renewable energy systems. The International Conference on Power Electrical Systems (PES) is a forum for researchers and specialists in different fields of electrical engineering related to Hybrid Renewable Energy Systems (HRES); Power Electronics in Renewable Energy Systems; Topologies and Control of Power Electronics Converters Used in Renewable Energy Systems; Electric machines modelling and control; Automotive electrical systems; Electric machine design; Monitoring and diagnostics; Special machines; Power systems; Power electronic converters; Renewable energy systems; Variable speed drives; Electromagnetic compatibility; Variable speed generating systems; Transformers.

In high power, high voltage electronics systems, a strategy to manage short timescale energy imbalances is fundamental to the system reliability. Without a theoretical framework, harmful local convergence of energy can affect the dynamic process of transformation, transmission, and storage which create an unreliable system. With an original approach that encourages understanding of both macroscopic and microscopic factors, the authors offer a solution. They demonstrate the essential theory and methodology for the design, modeling and prototyping of modern power electronics converters to create highly effective systems. Current applications such as renewable energy systems and hybrid electric vehicles are discussed in detail by the authors. Key features: offers a logical guide that is widely applicable to power electronics across power supplies, renewable energy systems, and many other areas analyses the short-scale (nano-micro second) transient phenomena and the transient processes in nearly all major timescales, from device switching processes at the nanoscale level, to thermal and mechanical processes at second level explores transient causes and shows how to correct them by changing the control algorithm or peripheral circuit includes two case studies on power electronics in hybrid electric vehicles and renewable energy systems Practitioners in major power electronic companies will benefit from this reference, especially design engineers aiming for optimal system performance. It will also be of value to faculty staff and graduate students specializing in power electronics within academia.