Tunnelling And Negative Resistance Phenomena In Semiconductors

Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction with its so-called ill-behaved nature and considering other consequences of the energy distribution effect. The next chapter is devoted to the tunneling effect through tunnel diodes along with other properties of this device. The circuitry and technology of tunnel diodes as well as backward and Zener diodes are then examined, along with negative conductance devices that are used as microwave sources. The final chapter is concerned with negative conductance switching devices. This book is intended for students and practitioners in the fields of physics and electronics.

These volumes are collections of the Nobel Lectures delivered by the prizewinners, together with their biographies, portraits and the presentation speeches for the period 1971 ? 1990. Each Nobel Lecture is based on the work that won the laureate his prize. New biographical data of the laureates, since they were awarded the Nobel Prize, are also included. These volumes of inspiring lectures by outstanding physicists should be on the bookshelf of every keen student, teacher and professor of physics as well as those in related fields.Below is a list of the prizewinners during the period 1971?1980 with a description of the works which won them their prizes: (1971) D GABOR ? for his invention and development of the holographic method; (1972) J BARDEEN, L N COOPER & J R SCHRIEFFER ? for their jointly developed theory of superconductivity, usually called the BCS-theory; (1973) L ESAKI & I GIAEVER ? for their experimental discoveries regarding tunneling phenomena in semiconductors and superconductors, respectively; B D JOSEPHSON ? for his theoretical predictions of the properties of a supercurrent through a tunnel barrier, in particular those phenomena which are generally known as the Josephson effects; (1974) M RYLE & A HEWISH ? for their pioneering research in radio astrophysics: Ryle for his observations and inventions, in particular of the aperture synthesis technique, and Hewish for his decisive role in the discovery of pulsars; (1975) A BOHR, B MOTTELSON & J RAINWATER ? for the discovery of the connection between collective motion and particle motion in atomic nuclei and the development of the theory of the structure of the atomic nucleus based on this connection; (1976) B RICHTER & S C C TING ? for their pioneering work in the discovery of a heavy elementary particle of a new kind; (1977) P W ANDERSON, N F MOTT & J H VAN VLECK ? for their fundamental theoretical investigations of the electronic structure of magnetic and disordered systems; (1978) P L KAPITSA ? for his basic inventions and discoveries in the area of low-temperature physics; A A PENZIAS & R W WILSON ? for their discoveries of cosmic microwave background radiation; (1979) S L GLASHOW, A SALAM & S WEINBERG ? for their contributions to the theory of the unified weak and electromagnetic interaction between elementary particles, including inter alia the prediction of the weak neutral current; (1980) J W CRONIN & V L FITCH ? for the discovery of violations of fundamental symmetry principles in the decay of neutral K-mesons.

Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillations, magnetophonon resonance, and magneto-optical phenomena are discussed. Experimental physicists, theoretical physicists, students and research workers, and engineers working in the field of semiconductor electronics will find this book a great source of vital information.

Plasma and Current Instabilities in Semiconductors details the main ideas in the physics of plasma and current instabilities in semiconductors. The title first covers plasma in semiconductors, and then proceeds to tackling waves in plasma. Next, the selection details wave instabilities in plasma and drift instabilities. The text also discusses hot electrons, along with the instabilities due to inter-valley electron transfer. The next chapters talks about avalanche and recombination instabilities. The last chapter deals with plasma streams. The book will be of great use to student and professional electronics engineers and technicians.

Crystal Growth, Second Edition deals with crystal growth methods and the relationships between them. The chemical physics of crystal growth is discussed, along with solid growth techniques such as annealing, sintering, and hot pressing; melt growth techniques such as normal freezing, cooled seed method, crystal pulling, and zone melting; solution growth methods; and vapor phase growth. This book is comprised of 15 chapters and opens with a bibliography of books and source material, highlighted by a classification of crystal growth techniques. The following chapters focus on the molecular state of a crystal when in equilibrium with respect to growth or dissolution; the fundamentals of classical and modern hydrodynamics as applied to crystal growth processes; creation, control, and measurement of the environment in which a crystal with desired properties can grow; and growth processes where transport occurs through the vapor phase. The reader is also introduced to crystal growth with molecular beam epitaxy; crystal pulling as a crystal growth method; and zone refining and its applications. This monograph will be of interest to physicists and crystallographers.

Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials focuses on the basic physics and technology of light emitting diodes (LEDS) and pn junction lasers as well as their luminescence properties. Optical processes in semiconductors and the useful devices which can be made are discussed. Comprised of 10 chapters, this book begins with an introduction to the crystal structure and growth, as well as the optical and electrical properties of LED materials. The detailed fabrication of the LED is then considered, along with the luminescence of the material and the diode light emission. Subsequent chapters explore solid-state lasers made from LED materials; the equipment used to measure luminescence, cathodoluminescence, and diode electro-optic characteristics; and luminescence in gallium arsenide, GaAs1-xPx, and gallium phosphide. Other LED materials such as silicon carbide and ternary semiconducting compounds are also surveyed. The text concludes with a brief chapter that describes some of the applications of LEDs and LED products. This monograph will be of value to students and non-graduate engineers with an interest in LEDs.