Wide Bandgap Semiconductor Materials And Devices 11 And State Of The Art Program On Compound Semiconductors 52 Sotapocs 52

This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and device applications: inorganic wide-bandgap semiconductor materials, including III-nitrides, II-oxides, SiC, diamond, II-VI, and emerging materials.

The papers included in this issue of ECS Transactions were originally presented in the joint symposium ¿State-of-the-Art Program on Compound Semiconductors 51 (SOTAPOCS 51) and Wide-Bandgap Semiconductor Materials and Devices 10¿, held during the 216th meeting of The Electrochemical Society, in Vienna, Austria from October 4 to 9, 2009.

This volume contains papers from two symposia: State of the Art Program on Compound Semiconductors 45 and Wide Bandgap Semiconductor Materials and Devices VII.

This issue contains the proceedings of both invited and contributed talks at the 47th State-Of-The-Art Programs on Compound Semiconductors (SOTAPOCS) symposium, and of the 8th Symposium on Wide Bandgap Semiconductors and Devices. The topics in this issue include some of the latest progress in compound and wide bandgap semiconductor development in fabrication processes, materials, characterization, devices, and reliability.

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52)¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.