Advanced Dielectric Piezoelectric And Ferroelectric Thin Films

Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric thin films are included in this volume. Dielectric, piezoelectric and ferroelectric thin films have a tremendous impact on a variety of commercial and military systems including tunable microwave devices, memories, MEMS devices, actuators and sensors. Recent work on piezoelectric characterization, AFE to FE dielectric phase transformation dielectrics, solution and vapor deposited thin films, and materials integration are among the topics included. Novel approaches to nanostructuring, characterization of material properties and physical responses at the nanoscale also is included.

This comprehensive book covers recent developments in advanced dielectric, piezoelectric and ferroelectric materials. Dielectric materials such as ceramics are used to manufacture microelectronic devices. Piezoelectric components have been used for many years in radioelectrics, time-keeping and, more recently, in microprocessor-based devices. Ferroelectric materials are widely used in various devices such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage and display devices. The book is divided into eight parts under the general headings: High strain high performance piezo- and ferroelectric single crystals; Electric field-induced effects and domain engineering; Morphotropic phase boundary related phenomena; High power piezoelectric and microwave dielectric materials; Nanoscale piezo- and ferroelectrics; Piezo- and ferroelectric films; Novel processing and new materials; Novel properties of ferroelectrics and related materials. Each chapter looks at key recent research on these materials, their properties and potential applications. Advanced dielectric, piezoelectric and ferroelectric materials is an important reference tool for all those working in the area of electrical and electronic materials in general and dielectrics, piezoelectrics and ferroelectrics in particular. Covers the latest developments in advanced dielectric, piezoelectric and ferroelectric materials Includes topics such as high strain high performance piezo and ferroelectric single crystals Discusses novel processing and new materials, and novel properties of ferroelectrics and related materials

Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric thin films are included in this volume. Dielectric, piezoelectric and ferroelectric thin films have a tremendous impact on a variety of commercial and military systems including tunable microwave devices, memories, MEMS devices, actuators and sensors. Recent work on piezoelectric characterization, AFE to FE dielectric phase transformation dielectrics, solution and vapor deposited thin films, and materials integration are among the topics included. Novel approaches to nanostructuring, characterization of material properties and physical responses at the nanoscale also is included.

Dielectrics is becoming increasingly important due to the rapid developments in electronics, optoelectronics, photonics and nanotechnology. In the past two decades, research on advanced dielectric materials and related applications has undergone an accelerated growth, due in larger part to the discovery of the superior piezoelectric properties in relaxor single crystals, the development of the lead-free piezoelectric/ferroelectric materials and the renaissance of the multiferroics.This book contains 9 feature articles which, together, provide a comprehensive account on the current state of advanced dielectrics and related phenomena. The first two articles present fundamental knowledge related to the characterization of ferroelectric hysteresis, which is the most widely used method to learn the ferroelectricity experimentally. The latest research progress in relaxor ferroelectric is given in the next two articles. The last five articles are dedicated to the multi-functionality of advanced dielectrics, with emphasis on multiferroic magnetoelectric composites, lead-free piezoceramics, pyroelectric/electrocaloric materials, polymer-based dielectrics, and flexible nanodielectrics.

The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.

This book contains four parts. The first one is dedicated to concepts. It starts with the definitions and examples of what is piezo-pyro and ferroelectricity by considering the symmetry of the material. Thereafter, these properties are described within the framework of Thermodynamics. The second part described the way to integrate these materials in Microsystems. The third part is dedicated to characterization: composition, structure and a special focused on electrical behaviors. The last part gives a survey of state of the art applications using integrated piezo or/and ferroelectric films.

Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on ways to obtain high-quality materials exhibiting large ferroelectric activity. The book covers the aspect of material synthesis and growth, doping and composites, lead-free devices, and thin film synthesis. The aim of this book is to provide an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric materials, allowing a deep understanding of the material aspects of ferroelectricity.

The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.