Carrier Dynamics In Quantum Well And Quantum Dot Lasers

1. Introduction to photonic quantum dot nanomaterials and devices. 1.1. Physical properties of quantum dots. 1.2. Active semiconductor gain media. 1.3. Quantum dot lasers. 1.4. Laser cavities -- 2. Theory of quantum dot light-matter dynamics. 2.1. Rate equations. 2.2. Maxwell-Bloch equations. 2.3. Quantum luminescence equations. 2.4. Quantum theoretical description -- 3. Light meets matter I: microscopic carrier effect. 3.1. Dynamics in the active charge carrier plasma. 3.2. Dynamic level hole burning. 3.3. Ultrashort nonlinear gain and index dynamics. 3.4. Conclusion -- 4. Light meets matter II: mesoscopic space-time dynamics. 4.1. Introduction: transverse and longitudinal mode dynamics. 4.2. Influence of the transverse degree of freedom and nano-structuring on nearfield dynamics and spectra. 4.3. Longitudinal modes. 4.4. Coupled space-time dynamics. 4.5. Conclusion -- 5. Performance and characterisation: properties on large time and length scales. 5.1. Introduction. 5.2. Spatial and spectral beam quality. 5.3. Dynamic amplitude phase coupling. 5.4. Conclusion -- 6. Nonlinear pulse propagation in semiconductor quantum dot lasers. 6.1. Dynamic shaping of short optical pulses. 6.2. Nonlinear femtosecond dynamics. 6.3. Conclusion -- 7. High-speed dynamics. 7.1. Mode-locking in multi-section quantum dot lasers. 7.2. Dependence of pulse duration on injection current, bias voltage and device geometry. 7.3. Radio frequency spectra of the emitted light. 7.4. Short-pulse optimisation. 7.5. Conclusion -- 8. Quantum dot random lasers. 8.1. Spatially inhomogeneous semiconductor quantum dot ensembles. 8.2. Coherence properties. 8.3. Random lasing in semiconductor quantum dot ensembles. 8.4. Conclusion -- 9. Coherence properties of quantum dot micro-cavity lasers. 9.1. Introduction. 9.2. Radial signal propagation and coherence trapping. 9.3. Influence of disorder. 9.4. Conclusions

Presents fundamental theories and simulations of the spatio-temporal dynamics and quantum fluctuations in semiconductor lasers. The dynamic interplay of light and matter is theoretically described by taking into account microscopic carrier dynamics, spatially dependent light-field propagation and the influence of spontaneous emission and noise.

Traces the quest to use nanostructured media for novel and improved optoelectronic devices. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.

Research in mid-infrared laser technology has uncovered numerous applications for commercial and government use. A limiting factor for mid- infrared semiconductors is nonradiative recombination, which is a process that produces excess heat without emitting a photon. Nonradiative recombination mechanisms occur over a short time period and difficult to measure. Growth methods have significantly reduced the nonradiative recombination in some materials. The objective of this research is to further the understanding of how quantum well structures impact carrier recombination. InAsSb/InAlASb and InAs/ GaInSb quantum well structures were studied with time-resolved photoluminescence utilizing upconversion, a non-linear wave mixing technique. This research reports Shockley-Read-Hall, radiative, and Auger recombination coefficients at 77k. The luminescence rise times of type I and type II structures are also compared. The number of states available within the quantum well was found to dictate how quickly carriers were able to recombine radiatively. Finally, spectral data was taken to examine the spectral decay of the luminescence. Carrier temperatures were extracted from the spectral data. Type I structures were found to have hotter carrier temperatures and higher Auger coefficients than type II structures.

This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based devices. Comprehensive theoretical models, which allow for an accurate description of such devices, are presented and applied to recent experimental observations. The low sensitivity of quantum-dot lasers to optical perturbations is directly attributed to their unique charge-carrier dynamics and amplitude-phase-coupling, which is found not to be accurately described by conventional approaches. The potential of quantum-dot semiconductor optical amplifiers for novel applications such as simultaneous multi-state amplification, ultra-wide wavelength conversion, and coherent pulse shaping is investigated. The scattering mechanisms and the unique electronic structure of semiconductor quantum-dots are found to make such devices prime candidates for the implementation of next-generation optoelectronic applications, which could significantly simplify optical telecommunication networks and open up novel high-speed data transmission schemes.

This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist. * The first comprehensive book-length treatment of quantum well lasers * Provides a detailed treatment of quantum well laser basics * Covers strained quantum well lasers * Explores the different state-of-the-art quantum well laser types * Provides key information on future laser technologies

A distinctive discussion of the nonlinear dynamical phenomena of semiconductor lasers. The book combines recent results of quantum dot laser modeling with mathematical details and an analytic understanding of nonlinear phenomena in semiconductor lasers and points out possible applications of lasers in cryptography and chaos control. This interdisciplinary approach makes it a unique and powerful source of knowledge for anyone intending to contribute to this field of research. By presenting both experimental and theoretical results, the distinguished authors consider solitary lasers with nano-structured material, as well as integrated devices with complex feedback sections. In so doing, they address such topics as the bifurcation theory of systems with time delay, analysis of chaotic dynamics, and the modeling of quantum transport. They also address chaos-based cryptography as an example of the technical application of highly nonlinear laser systems.