Cleaning Technology In Semiconductor Device Manufacturing Ix

Within this issue of ECS Transactions, papers cover a wide range of topics related to removal of contaminents from the silicon surfaces; topics related to surface conditioning prior to critical deposition steps; and, topics specific cleaning methods used in front-end and back-end operations.

This issue of ECS Transactions includes papers presented during the 11th International Symposium on Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing held during the ECS Fall Meeting in Vienna, Austria, October 4-9, 2009.

This issue covers topics related to the removal of contaminants from and conditioning of Si (SOI), SiC, Ge, SiGe, and III-V semiconductor surfaces; cleaning media, including non-aqueous cleaning methods and tools; front- and back-end cleaning operations; integrated cleaning; cleaning of MEMS; photomasks (reticles); porous low-k dielectrics; post-CMP cleaning; wafer bevel cleaning and polishing; characterization, evaluation, and monitoring of cleaning; correlation with device performance as well as cleaning of equipment and storage and handling hardware. The hardcover edition includes a bonus CD-ROM of Cleaning Technology in Semiconductor Device Manufacturing 1989?2007: Proceedings from the ECS Semiconductor Cleaning Symposia 1?10. This bonus material is not available with the PDF edition.