Electronic Properties Of Semiconductor Interfaces

Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

This book presents a state-of-the-art understanding of semiconductor-electrolyte interfaces. It provides a detailed study of semiconductor-electrolyte interfacial effects, focusing on the physical and electrochemical foundations that affect surface charge, capacitance, conductance, quantum effects, and other properties, both from the point of view of theoretical modeling and metrology. The wet-dry interface, where solid-state devices may be in contact with electrolyte solutions, is of growing interest and importance. This is because such interfaces will be a key part of hydrogen energy and solar cells, and of sensors that would have wide applications in medicine, genomics, environmental science, and bioterrorism prevention. The field effect presented here by Pavel Konorov, Adil Yafyasov, and Vladislav Bogevolnov is a new method, one that allows investigation of the physical properties of semiconductor and superconductor surfaces. Before the development of this method, it was impossible to test these surfaces at room temperature. The behavior of electrodes in electrolytes under such realistic conduction conditions has been a major problem for the technical realization of systems that perform measurements in wet environments. This book also describes some material properties that were unknown before the development of the field effect method. This book will be of great interest to students and engineers working in semiconductor surface physics, electrochemistry, and micro- and nanoelectronics.

An Essential Guide to Electronic Material Surfaces and Interfaces is a streamlined yet comprehensive introduction that covers the basic physical properties of electronic materials, the experimental techniques used to measure them, and the theoretical methods used to understand, predict, and design them. Starting with the fundamental electronic properties of semiconductors and electrical measurements of semiconductor interfaces, this text introduces students to the importance of characterizing and controlling macroscopic electrical properties by atomic-scale techniques. The chapters that follow present the full range of surface and interface techniques now being used to characterize electronic, optical, chemical, and structural properties of electronic materials, including semiconductors, insulators, nanostructures, and organics. The essential physics and chemistry underlying each technique is described in sufficient depth for students to master the fundamental principles, with numerous examples to illustrate the strengths and limitations for specific applications. As well as references to the most authoritative sources for broader discussions, the text includes internet links to additional examples, mathematical derivations, tables, and literature references for the advanced student, as well as professionals in these fields. This textbook fills a gap in the existing literature for an entry-level course that provides the physical properties, experimental techniques, and theoretical methods essential for students and professionals to understand and participate in solid-state electronics, physics, and materials science research. An Essential Guide to Electronic Material Surfaces and Interfaces is an introductory-to-intermediate level textbook suitable for students of physics, electrical engineering, materials science, and other disciplines. It is essential reading for any student or professional engaged in surface and interface research, semiconductor processing, or electronic device design.

Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

Surfaces and Interfaces of Solid Materials emphasises both experimental and theoretical aspects of surface and interface physics. Beside the techniques of preparing well-defined solid surfaces and interfaces basic models for the description of structural, vibronic and electronic properties of interfaces are described, as well as fundamental aspects of adsorption and layer growth. Because of its importance for modern microelectronics special emphasis is placed on the electronic properties of semiconductor interfaces and heterostructures. Experimental topics covering the basics of ultrahigh-vacuum technology, electron optics, surface spectroscopies and electrical interface characterization techniques are presented in the form of separate panels.