Essentials Of Semiconductor Device Physics

ESSENTIALS OF SEMICONDUCTOR DEVICE PHYSICS An introductory semiconductor device physics textbook that is accessible to readers without a background in statistical physics I wish this book had been available when I needed to make a Semiconductor class myself a few years ago [...] A very nice aspect is that some concepts (e.g. density of states) are explained in a way that I have not seen elsewhere. These types of unconventional approaches are very valuable for a teacher. (Bjorn Maes, University of Mons, Belgium) [...] the author offers an accessible description of statistical analysis and adopts it to explain the core properties of semiconductors. [...] [He] uses interesting metaphors and analogies to exemplify some of the most difficult notions, in an innovative and engaging way. (Andrea di Falco, University of St. Andrews, UK) The subject of this book is the physics of semiconductor devices, which is an important topic in engineering and physics because it forms the background for electronic and optoelectronic devices, including solar cells. The author aims to provide students and teachers with a concise text that focuses on semiconductor devices and covers the necessary background in statistical physics. This text introduces the key prerequisite knowledge in a simple, clear, and friendly manner. It distills the key concepts of semiconductor devices down to their essentials, enabling students to master this key subject in engineering, physics, and materials. The subject matter treated in this book is directly connected to the physics of p-n junctions and solar cells, which has become a topic of intense interest in the last decade. Sample topics covered within the text include: Chemical potential, Fermi level, Fermi-Dirac distribution, drift current and diffusion current. The physics of semiconductors, band theory and intuitive derivations of the concentration of charge carriers. The p-n junction, with qualitative analysis preceding the mathematical descriptions. A derivation of the current vs voltage relation in p-n junctions (Shockley equation). Important applications of p-n junctions, including solar cells The two main types of transistors: Bipolar Junction Transistors (BJT) and Metal Oxide Semiconductor Field Effect Transistors (MOSFET) For students and instructors, it may be used as a primary textbook for an introductory semiconductor device physics course and is suitable for a course of approximately 30-50 hours. Scientists studying and researching semiconductor devices in general, and solar cells in particular, will also benefit from the clear and intuitive explanations found in this book.

This book is an introduction to the principles of semiconductor physics, linking its scientific aspects with practical applications. It is addressed to both readers who wish to learn semiconductor physics and those seeking to understand semiconductor devices. It is particularly well suited for those who want to do both.

An in-depth, up-to-date presentation of the physics and operational principles of all modern semiconductor devices The companion volume to Dr. Sze's classic Physics of Semiconductor Devices, Modern Semiconductor Device Physics covers all the significant advances in the field over the past decade. To provide the most authoritative, state-of-the-art information on this rapidly developing technology, Dr. Sze has gathered the contributions of world-renowned experts in each area. Principal topics include bipolar transistors, compound-semiconductor field-effect-transistors, MOSFET and related devices, power devices, quantum-effect and hot-electron devices, active microwave diodes, high-speed photonic devices, and solar cells. Supported by hundreds of illustrations and references and a problem set at the end of each chapter, Modern Semiconductor Device Physics is the essential text/reference for electrical engineers, physicists, material scientists, and graduate students actively working in microelectronics and related fields.

Provides a modern introduction to semiconductor physics, presentingthe basic information necessary to understand semiconductors, alongwith some of the latest theories and developments. Based on theauthor's undergraduate course, this book bridges the gap betweenbasic subjects such as quantum mechanics and Maxwell's equationsand the fundamental processes determining the behaviour ofsemiconductors. Following a quantum mechanics approach this text ispredominantly aimed at scientists rather then engineers, and formsthe basis for the understanding of modern mesoscopic physics insemiconductors and quantum devices like resonant tunnelingdiodes. Rather than attempting to comprehensively cover all aspects ofsemiconductor physics, this text aims to cover the most importantand interesting aspects of this subject to scientists. Startingwith the development of semiconductor physics from basic quantummechanics, the text moves on to cover band structure and effectivemass theory, before covering electron-phonon coupling and chargetransport. It concludes with a chapter on optical transitions.Students will need some knowledge of quantum mechanics and solidstate although this is covered to some extent in the book. FEATURES * Concise introduction to the basics of semiconductor physics * Bridges the gap between fundamental subjects such as quantummechanics and Maxwell's equations and the processes determining thebehaviour of semiconductors * Describes semiconductor theory from a full quantum mechanicalapproach.An accessible introduction, avoiding reliance on grouptheory CONTENTS: Preface; Notation Conventions; Introduction; Electrons,nuclei and Hamiltonians; Band Structure; The k - p Approximation;Effective Mass Theory; The Crystal Lattice; Electron-phononCoupling; Charge Transport, Optical Transitions; Band Electrons inan Optical Field; Appendix A: The Hydrogen Atom; Appendix B: TheHarmonic Oscillator; Appendix C: Perturbation Theory; AppendixD:Tensors in Cubic Crystals; Appendix E: The Classical Limit;Appendix F: Some Fourier Transforms; Appendix G: Exercises;Bibliography.

The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.

This book is an introduction to the principles of semiconductor physics, linking its scientific aspects with practical applications. It is addressed to both readers who wish to learn semiconductor physics and those seeking to understand semiconductor devices. It is particularly well suited for those who want to do both. Intended as a teaching vehicle, the book is written in an expository manner aimed at conveying a deep and coherent understanding of the field. It provides clear and complete derivations of the basic concepts of modern semiconductor physics. The mathematical arguments and physical interpretations are well balanced: they are presented in a measure designed to ensure the integrity of the delivery of the subject matter in a fully comprehensible form. Experimental procedures and measured data are included as well. The reader is generally not expected to have background in quantum mechanics and solid state physics beyond the most elementary level. Nonetheless, the presentation of this book is planned to bring the student to the point of research/design capability as a scientist or engineer. Moreover, it is sufficiently well endowed with detailed knowledge of the field, including recent developments bearing on submicron semiconductor structures, that the book also constitutes a valuable reference resource. In Chapter 1, basic features of the atomic structures, chemical nature and the macroscopic properties of semiconductors are discussed. The band structure of ideal semiconductor crystals is treated in Chapter 2, together with the underlying one-electron picture and other fundamental concepts. Chapter 2 also provides the requisite background of the tight binding method and the k.p-method, which are later used extensively. The electron states of shallow and deep centers, clean semiconductor surfaces, quantum wells and superlattices, as well as the effects of external electric and magnetic fields, are treated in Chapter 3. The one- or multi-band effective mass theory is used wherever this method is applicable. A summary of group theory for application in semiconductor physics is given in an Appendix. Chapter 4 deals with the statistical distribution of charge carriers over the band and localized states in thermodynamic equilibrium. Non-equilibrium processes in semiconductors are treated in Chapter 5. The physics of semiconductor junctions (pn-, hetero-, metal-, and insulator-) is developed in Chapter 6 under conditions of thermodynamic equilibrium, and in Chapter 7 under non-equilibrium conditions. On this basis, the most important electronic and opto-electronic semiconductor devices are treated, among them uni- and bi-polar transistors, photodetectors, solar cells, and injection lasers. A summary of group theory for applications in semiconductors is given in an Appendix. Contents:Characterization of SemiconductorsElectronic Structure of Ideal CrystalsElectronic Structure of Semiconductor Crystals with PerturbationsElectron System in Thermodynamic EquilibriumNon-Equilibrium Processes in SemiconductorsSemiconductor Junctions in Thermodynamic EquilibriumSemiconductor Junctions Under Non-Equilibrium Conditions Readership: Undergraduates, graduates and researchers in the fields of physics and engineering. keywords:Semiconductors;Transistor;Devices;Heterojunctions;Microstructures;Band-Structure;Luttinger-Kohn-Model;Kane-Model;Deep-Levels;Transport;Semiconductor Physics;Fundamental Physical Phenomena;General Backround;Characterization of Semiconductor;Electronic Structur of Semiconductors;Semiconductor Junctions the Thermodynamic Equilibrium;Semiconductor Junctions Under Non-Equilibrium Conductions; “… The reader who has only a first acquaintance with semiconductor physics will find that this book has fully detailed explanations of the fundamental physical phenomena, providing a good general background … A brilliant discussion of artifical atomic superstructures of nanometer length scale establishes a link to the most active field of semiconductor physics … In my opinion the book of R Enderlein and N J M Horing Fundamentals of Semiconductor Physics and Devices is a valuable contribution to the modern didactic literature on the physics of semiconductors. Morever, it is of considerable value as a reference for specialists as well.” J T Devreese Professor at the Physics Department University of Antwerpen, Belgium “In Fundamentals of Semiconductor Physics and Devices, R Enderiein and N J M Horing have provided a very extensive and detailed text on the physics underlying semiconductor devices. More so than any other current text, this book provides a greatly expanded discussion of modern tight-binding methods, helping the students to understand these aspects of electronic structure in clear, simple terms. In connection with this the authors offer a very detailed discussion of deep levels in semiconductors, which are so important to semiconducting properties. Also, in the discussion of transport properties, the book goes into much greater depth about nonlinear and nonequilibrium processes than is usual. It is quite a unique contribution, containing the basic physics which tends to be missing from device-oriented books, but going much further into the essentials needed for device development than any solid-state-physics text.” Walter A Harrison Professor of Applied Physics Stanford University, USA

This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.