Graphene Field Effect Transistors

In this monograph, the graphene-based field-effect transistor (FET) biosensors are shown to be an emerging sensing platform. Divided into two parts the first set of chapters are devoted to basic knowledge of graphene, graphene FET and its biosensing. In the second part of this book the applications of graphene FET biosensors combined with various biotechnologies are presented. As well as discussing the existing technologies the authors also introduce their own ideas and concepts. Finally the remaining problems in graphene FET biosensors are discussed, along with proposed solutions and prospects for future applications. This monograph allows readers to grasp the basic knowledge and future direction of graphene-based FET biosensors.

Graphene Field-Effect Transistors In-depth resource on making and using graphene field effect transistors for point-of-care diagnostic devices Graphene Field-Effect Transistors focuses on the design, fabrication, characterization, and applications of graphene field effect transistors, summarizing the state-of-the-art in the field and putting forward new ideas regarding future research directions and potential applications. After a review of the unique electronic properties of graphene and the production of graphene and graphene oxide, the main part of the book is devoted to the fabrication of graphene field effect transistors and their sensing applications. Graphene Field-Effect Transistors includes information on: Electronic properties of graphene, production of graphene oxide and reduced graphene oxide, and graphene functionalization Fundamentals and fabrication of graphene field effect transistors, and nanomaterial/graphene nanostructure-based field-effect transistors Graphene field-effect transistors integrated with microfluidic platforms and flexible graphene field-effect transistors Graphene field-effect transistors for diagnostics applications, and DNA biosensors and immunosensors based on graphene field-effect transistors Graphene field-effect transistors for targeting cancer molecules, brain activity recording, bacterial detection, and detection of smell and taste Providing both fundamentals of the technology and an in-depth overview of using graphene field effect transistors for fabricating bioelectronic devices that can be applied for point-of-care diagnostics, Graphene Field-Effect Transistors is an essential reference for materials scientists, engineering scientists, laboratory medics, and biotechnologists.

Graphene Field-Effect Transistors In-depth resource on making and using graphene field effect transistors for point-of-care diagnostic devices Graphene Field-Effect Transistors focuses on the design, fabrication, characterization, and applications of graphene field effect transistors, summarizing the state-of-the-art in the field and putting forward new ideas regarding future research directions and potential applications. After a review of the unique electronic properties of graphene and the production of graphene and graphene oxide, the main part of the book is devoted to the fabrication of graphene field effect transistors and their sensing applications. Graphene Field-Effect Transistors includes information on: Electronic properties of graphene, production of graphene oxide and reduced graphene oxide, and graphene functionalization Fundamentals and fabrication of graphene field effect transistors, and nanomaterial/graphene nanostructure-based field-effect transistors Graphene field-effect transistors integrated with microfluidic platforms and flexible graphene field-effect transistors Graphene field-effect transistors for diagnostics applications, and DNA biosensors and immunosensors based on graphene field-effect transistors Graphene field-effect transistors for targeting cancer molecules, brain activity recording, bacterial detection, and detection of smell and taste Providing both fundamentals of the technology and an in-depth overview of using graphene field effect transistors for fabricating bioelectronic devices that can be applied for point-of-care diagnostics, Graphene Field-Effect Transistors is an essential reference for materials scientists, engineering scientists, laboratory medics, and biotechnologists.

This book describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices. It is argued that the underlying physics that differentiates these devices from their normal semiconductor-based counterparts is most clearly revealed by non-computer-intensive descriptions that allow the designer to compare their behaviour with that of their well-studied semiconductor counterparts. Because it admits a reasonable description of both the lateral and vertical field and transport functionality of the FET structure, the gradual-channel approximation is key to this approach.

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Graphene Bioelectronics covers the expending field of graphene biomaterials, a wide span of biotechnological breakthroughs, opportunities, possibilities and challenges. It is the first book that focuses entirely on graphene bioelectronics, covering the miniaturization of bioelectrode materials, bioelectrode interfaces, high-throughput biosensing platforms, and systemic approaches for the development of electrochemical biosensors and bioelectronics for biomedical and energy applications. The book also showcases key applications, including advanced security, forensics and environmental monitoring. Thus, the evolution of these scientific areas demands innovations in crosscutting disciplines, starting from fabrication to application. This book is an important reference resource for researchers and technologists in graphene bioelectronics—particularly those working in the area of harvest energy biotechnology—employing state-of-the-art bioelectrode materials techniques. Offers a comprehensive overview of state-of-art research on graphene bioelectronics and their potential applications Provides innovative fabrication strategies and utilization methodologies, which are frequently adopted in the graphene bioelectronics community Shows how graphene can be used to make more effective energy harvesting devices

This collection of selected papers presented at the 12th International Conference on Scientific Computing in Electrical Engineering, SCEE 2018, held in Taormina, Sicily, Italy, in September 2018, showcases the state of the art in SCEE. The aim of the SCEE 2018 conference was to bring together scientists from academia and industry, mathematicians, electrical engineers, computer scientists, and physicists, and to promote intensive discussions on industrially relevant mathematical problems, with an emphasis on the modeling and numerical simulation of electronic circuits and of electromagnetic fields. This extensive reference work is divided into five parts: Computational Electromagnetics, Device Modeling and Simulation, Circuit Simulation, Mathematical and Computational Methods, Model Order Reduction. Each part starts with a general introduction, followed by the respective contributions. The book will appeal to mathematicians and electrical engineers. Further, it introduces algorithm and program developers to recent advances in the other fields, while industry experts will be introduced to new programming tools and mathematical methods.

This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.