Group Iv Semiconductor Nanostructures Volume 832

Broad interest and steady progress in the area of Group-IV (Si:Ge:C) semiconductor nanostructures, including quantum dots, wires and wells, has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. This volume brings together scientists from different disciplines to discuss fabrication and characterization techniques and optical and transport properties, as well as applications of Group-IV semiconductor nanostructures. Fields such as photonic systems, nanocrystal memories, light-emitting and THz devices, nanowire-based interconnections and transistors are addressed. Topics include: nanoscale silicon-based photonic systems; Si/SiGe/SiN heterostructures and devices; Si/SiGe quantum cascade laser for terahertz; three-dimensional Si/SiGe nanostructures; Si nanocrystals and porous Si- light-emitting properties; Si nanocrystals and porous Si - other properties; Group-IV semiconductor nanowires; and rare-earth-doped Group-IV semiconductor nanostructures.

Broad interest and steady progress in the area of Group-IV (Si:Ge:C) semiconductor nanostructures, including quantum dots, wires and wells, has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. This volume brings together scientists from different disciplines to discuss fabrication and characterization techniques and optical and transport properties, as well as applications of Group-IV semiconductor nanostructures. Fields such as photonic systems, nanocrystal memories, light-emitting and THz devices, nanowire-based interconnections and transistors are addressed. Topics include: nanoscale silicon-based photonic systems; Si/SiGe/SiN heterostructures and devices; Si/SiGe quantum cascade laser for terahertz; three-dimensional Si/SiGe nanostructures; Si nanocrystals and porous Si- light-emitting properties; Si nanocrystals and porous Si - other properties; Group-IV semiconductor nanowires; and rare-earth-doped Group-IV semiconductor nanostructures.

The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

This book focuses on advances in materials science and device applications of nanostructures composed of Si, Ge, diamond, SiGe and SiCGe. Continuous progress in the development of reproducibly grown quantum dots, wires and wells has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. The broad spectrum of these devices ranges from commercially offered high-mobility transistors using strained Si to exploratory SiGe nanostructures for integrated optical interconnects and THz lasers. This book brings together researchers from chemistry, physics, biology, materials science and engineering to share and discuss both the challenges and progress towards a new generation of Si(SiGe, SiCGe)-based novel functional structures and devices. Topics include: light emission and photonic devices; Ge, SiGe and diamond nanostructures; strains, Si/Ge films and layers and Si nanocrystals.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

This book continues the long-standing and highly successful series on amorphous silicon science and technology. The opening article honors the pioneering use of photons to probe silicon films and provides an historical overview of optical absorption for studies of the Urbach edge and disorder. Additional invited presentations focus on new approaches for the fabrication of higher stability amorphous silicon-based materials and solar cells, and on the characterization of materials and cells both structurally and electronically. The book includes topics relevant to solar cells, including the role of hydrogen in metastability phenomena and deposition processes, and the application of atomistic material simulations in elucidating film growth mechanisms and structure as characterized by in situ probes. Chapters are devoted to nanostructures, such as quantum dots and wires, and to nano/microcrystalline and poly/single crystalline films, the latter involving new concepts in crystalline grain growth and epitaxy. Device applications are also highlighted, such as thin-film transistors, solar cells, and image sensors, operable on the meter scale, to memories, operable on the nanometer scale.