High Performance Materials And Devices For High Speed Electronic Systems

In this review volume, the editors have included the state-of-the-art research and development in nano composites, and optical electronics written by experts in the field. In addition, it also covers applications for emerging technologies in High-Speed Electronics. In summary, topics covered in this volume includes various aspects of high performance materials and devices for implementing High-Speed Electronic systems.

In this volume, we have put together papers spanning a broad range — from the area of modeling of strain and misfit dislocation densities, microwave absorption characteristics of nanocomposites, to X-ray diffraction studies.Specific topics in this volume include:In summary, papers selected in this volume cover various aspects of high performance logic and circuits for high-speed electronic systems.

'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.

Published as part of the well-established book series, Selected Topics in Electronics and Systems, this compendium features 18 peer reviewed articles focusing on high-performance materials and emerging devices for implementation in high-speed electronic systems.Wide-ranging topics span from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields.Systems for implementing data with security tokens; single chemical sensor for multi-analyte mixture detection; RF energy harvesters; additively manufactured RF devices for 5G, IoT, RFID and smart city applications are also prominently included.Written by eminent researchers, recent developments also highlight equivalent circuits models at room temperature and 4.2 K; quantum dot nonvolatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications.

This unique edited compendium consists of peer-reviewed articles focusing on 2D materials-based nanoelectronics to nanophotonic devices for biosensors and bio-nano-systems.Wide-ranging topics span from novel systems for implementing data with security tokens, single chemical sensor for multi-analyte mixture detection, additively manufactured RF devices for communication, packaging, remote sensing, to energy harvesting applications.Quantum dot-based devices featuring optical modulators and mid-infrared photodetectors in the form of Ferroelectric and quantum dot non-volatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications are also included.Contributed by eminent researchers, recent coverage of materials science for high-speed electronics, nanoelectronics based on ferroelectric and van der Waals materials, material synthesis, modeling of dislocations behavior in various heterostructures, Ultrahigh-Q on-chip SiGe microresonators for quantum transduction in new trend in computing are also prominently discussed.

This unique compendium consists of peer-reviewed articles spanning from novel growth of materials for nanoelectronic and nanophotonic devices, electronic nose sensor array, bio-nano-systems, artificial intelligence/machine learning, and emerging technologies, to applications in each of these fields.Systems implementing additively manufactured RF devices for communication, packaging, remote sensing, compact multi-bit FETs and memories are also included.Plasmonic nanostructures with electrical connections have potential applications as new electro-optic devices. Quantum dot-based devices are discussed with regard to optical logic gates, mid-infrared photodetectors, gain and index tailored external cavity high power lasers.Contributed by eminent researchers, this useful reference text broadly illustrates relevant aspects of high-performance materials and emerging nanodevices for implementing high-speed electronic systems.

This volume on Nanotechnology in Electronics, Photonics, Biosensors, and Emerging Technologies comprises research papers spanning from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields. These include blockchain improving security; ultra-sensitive Point of Care biosensor for detecting pathogeneses and detection of RNA-Virus infections; and advanced materials and devices such as ROM for anti-reverse engineering, FPGA bit-stream encryption, switching transients in memristors, and high-speed multi-bit logic and memories. Applications such as 3D-4D inkjet-printed wireless ultra-broadband modules for IOT, smarttag, and smart city applications are also included. In the area of material synthesis, carbon nanotube synthesis, III-nitride film growth via plasma-enhanced atomic layer deposition are noted. Threading dislocation behavior in InGaAs/GaAs (001) superlattice buffer layers brings a novel approach.Papers presented in this volume cover various aspects of high performance materials and devices for implementing high-speed electronic systems. This volume will serve as a useful reference for recent developments in nanotechnology.

Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback. Sample Chapter(s). Chapter 1: Simulation and Experimental Results on Gan Based Ultra-Short Planar Negative Differential Conductivity Diodes for THZ Power Generation (563 KB). Contents: Simulation and Experimental Results on GaN Basee Ultra-Short Planar Negative Differential Conductivity Diodes for THz Power Generation (B Aslan et al.); Millimeter Wave to Terahertz in CMOS (K K O S Sankaran et al.); Surface Acoustic Wave Propagation in GaN-On-Sapphire Under Pulsed Sub-Band Ultraviolet Illumination (V S Chivukula et al.); The First 70nm 6-Inch GaAs PHEMT MMIC Process (H Karimy et al.); Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces (K Tang et al.); GaN Transistors for Power Switching and Millimeter-Wave Applications (T Ueda et al.); Bi-Directional Scalable Solid-State Circuit Breakers for Hybrid-Electric Vehicles (D P Urciuoli & V Veliadis); and other papers. Readership: Electronic engineers, solid state physicists, graduate students studying physics or electrical engineering.