In Situ Real Time Characterization Of Thin Films

An in-depth look at the state of the art of in situ real-time monitoring and analysis of thin films With thin film deposition becoming increasingly critical in the production of advanced electronic and optical devices, scientists and engineers working in this area are looking for in situ, real-time, structure-specific analytical tools for characterizing phenomena occurring at surfaces and interfaces during thin film growth. This volume brings together contributed chapters from experts in the field, covering proven methods for in situ real-time analysis of technologically important materials such as multicomponent oxides in different environments. Background information and extensive references to the current literature are also provided. Readers will gain a thorough understanding of the growth processes and become acquainted with both emerging and more established methods that can be adapted for in situ characterization. Methods and their most useful applications include: * Low-energy time-of-flight ion scattering and direct recoil spectroscopy (TOF-ISRAS) for studying multicomponent oxide film growth processes * Reflection high-energy electron diffraction (RHEED) for determining the nature of chemical reactions at film surfaces * Spectrometric ellipsometry (SE) for use in the analysis of semiconductors and other multicomponent materials * Reflectance spectroscopy and transmission electron microscopy for monitoring epitaxial growth processes * X-ray fluorescence spectroscopy for studying surface and interface structures * And other cost-effective techniques for industrial application

Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research. Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth. With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. Chapters review electron diffraction techniques, including the methodology for observations and measurements Discusses the principles and applications of photoemission techniques Examines alternative in situ characterisation techniques

The book focuses on advanced characterization methods for thin-film solar cells that have proven their relevance both for academic and corporate photovoltaic research and development. After an introduction to thin-film photovoltaics, highly experienced experts report on device and materials characterization methods such as electroluminescence analysis, capacitance spectroscopy, and various microscopy methods. In the final part of the book simulation techniques are presented which are used for ab-initio calculations of relevant semiconductors and for device simulations in 1D, 2D and 3D. Building on a proven concept, this new edition also covers thermography, transient optoelectronic methods, and absorption and photocurrent spectroscopy.

This second edition, edited by the world-renowned Dr. Rointain Bunshah, is an extensive update of the many improvements in deposition technologies, mechanisms, and applications. Considerably more material was added in Plasma Assisted Vapor Deposition processes, as well as Metallurgical Coating Applications.

The aim of this book is to present in one volume some of the most significant developments that have taken place in the field of integrated ferroelectrics during the last decade of the twentieth century. The book begins with a comprehensive introduction to integrated ferroelectrics and follows with fifty-three papers selected by Carlos Paz de Araujo, Orlando Auciello, Ramamoorthy Ramesh, and George W. Taylor. These fifty-three papers were selected from more than one thousand papers published over the last eleven years in the proceedings of the International Symposia on Integrated Ferroelectrics (ISIF). These papers were chosen on the basis that they (a) give a broad view of the advances that have been made and (b) indicate the future direction of research and technological development. Readers who wish for a more in-depth treatment of the subject are encouraged to refer to volumes 1 to 27 of Integrated Ferroelectrics, the main publication vehicle for papers in this field.

The Handbook of Ellipsometry is a critical foundation text on an increasingly critical subject. Ellipsometry, a measurement technique based on phase and amplitude changes in polarized light, is becoming popular in a widening array of applications because of increasing miniaturization of integrated circuits and breakthroughs in knowledge of biological macromolecules deriving from DNA and protein surface research. Ellipsometry does not contact or damage samples, and is an ideal measurement technique for determining optical and physical properties of materials at the nano scale. With the acceleration of new instruments and applications now occurring, this book provides an essential foundation for the current science and technology of ellipsometry for scientists and engineers in industry and academia at the forefront of nanotechnology developments in instrumentation, integrated circuits, biotechnology, and pharmaceuticals. Divided into four parts, this comprehensive handbook covers the theory of ellipsometry, instrumentation, applications, and emerging areas. Experts in the field contributed to its twelve chapters, covering various aspects of ellipsometry.

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.