Infrared Optoelectronics

Organized as a mini-encyclopedia of infrared optoelectronic applications, this long awaited new edition of an industry standard updates and expands on the groundbreaking work of its predecessor. Pioneering experts, responsible for many advancements in the field, provide engineers with a fundamental understanding of semiconductor physics and the technical information needed to design infrared optoelectronic devices. Fully revised to reflect current developments in the field, Optoelectronics: Infrared-Visible-Ultraviolet Devices and Applications, Second Edition reviews relevant semiconductor fundamentals, including device physics, from an optoelectronic industry perspective. This easy-reading text provides a practical engineering introduction to optoelectronic LEDs and silicon sensor technology for the infrared, visible, and ultraviolet portion of the electromagnetic spectrum. Utilizing a practical and efficient engineering approach throughout, the text supplies design engineers and technical management with quick and uncluttered access to the technical information needed to design new systems.

Written in an easy-to-read style that answers the needs of engineers and facilitates quick comprehension of a wealth of technical data and concepts, Infrared Optoelectronics is an essential source for optical, design, and electrical and electronic engineers.

Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging

Optoelectronic devices operating in the mid-infrared wavelength range offer applications in a variety of areas from environmental gas monitoring around oil rigs to the detection of narcotics. They could also be used for free-space optical communications, thermal imaging applications and the development of "homeland security" measures. Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological development in this rapidly emerging area; the basic physics, some of the problems facing the design engineer and a comparison of possible solutions are laid out; the different lasers used as sources for mid-infrared technology are considered; recent work in detectors is reviewed; the last part of the book is concerned with applications. With a world-wide authorship of experts working in many mid-infrared-related fields this book will be an invaluable reference for researchers and graduate students drawn from physics, electronic and electrical engineering and materials science.

Infrared laser absorption spectroscopy (IRLAS) employing both tuneable diode and quantum cascade lasers (TDLs, QCLs) has been applied with both high sensitivity and high time resolution to plasma diagnostics and trace gas measurements. TDLAS combined with a conventional White type multiple pass cell was used to detect up to 13 constituent molecular species in low pressure Ar/H2/N2/O2 and Ar/CH4/N2/O2 microwave discharges, among them the main products such as H2O, NH3, NO and CO, HCN respectively. The hydroxyl radical has been measured in the mid infrared (MIR) spectral range in-situ in both plasmas yielding number densities of between 1011 ... 1012 cm-3. Strong indications of surface dominated formation of either NH3 or N2O and NO were found in the H2-N2-O2 system. In methane containing plasmas a transition between deposition and etching conditions and generally an incomplete oxidation of the precursor were observed. The application of QCLs for IRLAS under low pressure conditions employing the most common tuning approaches has been investigated in detail. A new method of analysing absorption features quantitatively when the rapid passage effect is present is proposed. If power saturation is negligible, integrating the undisturbed half of the line profile yields accurate number densities without calibrating the system. By means of a time resolved analysis of individual chirped QCL pulses the main reasons for increased effective laser line widths could be identified. Apart from the well-known frequency down chirp non-linear absorption phenomena and bandwidth limitations of the detection system may significantly degrade the performance and accuracy of inter pulse spectrometers. The minimum analogue bandwidth of the entire system should normally not fall below 250 MHz. QCLAS using pulsed lasers has been used for highly time resolved measurements in reactive plasmas for the first time enabling a time resolution down to about 100 ns to be achieved. A temperature increase of typically less than 50 K has been established for pulsed DC discharges containing Ar/N2 and traces of NO. The main NO production and depletion reactions have been identified from a comparison of model calculations and time resolved measurements in plasma pulses of up to 100 ms. Considerable NO struction is observed after 5 ... 10 ms due to the impact of N atoms. Finally, thermoelectrically cooled pulsed and continuous wave (cw) QCLs have been employed for high finesse cavity absorption spectroscopy in the MIR. Cavity ring down spectroscopy (CRDS) has been performed with pulsed QCLs and was found to be limited by the intrinsic frequency chirp of the laser suppressing an efficient intensity build-up inside the cavity. Consequently the accuracy and advantage of an absolute internal absorption calibration is not achievable. A room temperature cw QCL was used in a complementary cavity enhanced absorption spectroscopy (CEAS) configuration which was equipped with different cavities of up to 1.3 m length. This spectrometer yielded path lengths of up to 4 km and a noise equivalent absorption down to 4 x 10-8 cm-1Hz-1/2. The corresponding molecular concentration detection limit (e.g. for CH4, N2O and C2H2 at 1303 cm-1/7.66 Aem) was generally below 1 x 1010 cm-3 for 1 s integration times and one order of magnitude less for 30 s integration times. The main limiting factor for achieving even higher sensitivity is the residual mode noise of the cavity. Employing a 0.5 m long cavity the achieved sensitivity was good enough for the selective measurement of trace atmospheric constituents at 2.2 mbar.

Nanoscale Compound Semiconductors and their Optoelectronics Applications provides the basic and fundamental properties of nanoscale compound semiconductors and their role in modern technological products. The book discusses all important properties of this important category of materials such as their optical properties, size-dependent properties, and tunable properties. Key methods are reviewed, including synthesis techniques and characterization strategies. The role of compound semiconductors in the advancement of energy efficient optoelectronics and solar cell devices is also discussed. The book also touches on the photocatalytic property of the materials by doping with graphene oxides--an emerging and new pathway. Covers all relevant types of nanoscale compound semiconductors for optoelectronics, including their synthesis, properties and applications Provides historical context and review of emerging trends in semiconductor technology, particularly emphasizing advances in non-toxic semiconductor materials for green technologies Reviews emerging applications of nanoscale compound semiconductor-based devices in optoelectronics, energy and environmental sustainability

Optoelectronics - Advanced Materials and Devices is a second edition following the initial Optoelectronics - Materials and Techniques book published in 2011 as part of the InTech collection of international works on optoelectronics. Optoelectronics, as the discipline devoted to the study and application of electronic devices that emit, detect, and otherwise control light, has widely proliferated globally and enabled many of today's modern conveniences. Because of this ubiquity, new applications and novel optical phenomena continue to drive innovation. Accordingly, as with the first book of the collection, this book covers recent achievements by specialists around the world. The growing number of countries participating in this endeavor including now Brazil, Canada, China, Egypt, France, Germany, India, Italy, Japan, Malaysia, Mexico, Moldova, Morocco, Netherlands, Portugal, Romania, Saudi Arabia, South Korea, Taiwan, Ukraine, USA, and Vietnam as well as joint participation of the US and Moldova scientists in edition of this book and writing one of its Chapters testify to the unifying effect of science. An interested reader will find in the book the description of properties and applications employing organic and inorganic materials, such as different polymers, oxides and semiconductors, as well as the methods of fabrication and analysis of operation and regions of application of modern optoelectronic devices.