Introduction To Magnetic Random Access Memory

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.

STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.

This text explains how hard disk drives operate, how billions of bytes of digital information are stored and accessed, and where the technology is going. In particular, the book emphasizes the most fundamental principles of magnetic information storage, including in-depth knowledge of both magnetics and signal processing methods. Magnetic Information Storage Technology contains many graphic illustrations and an introduction of alternative storage technologies, such as optic disk recording, holographic recording, semiconductor flash memory, and magnetic random access memory. Provides the fundamentals of magnetic information storage and contrasts it with a comparison of alternative storage technologies Addresses the subject at the materials, device and system levels Addresses the needs of the multi-billion-dollar-a year magnetic recording and information storage industry Emphasizes both theoretical and experimental concepts Condenses current knowledge on magnetic information storage technology into one self-contained volume Suitable for undergraduate and graduate students, as well as seasoned researchers, engineers and professionals in data and information storage fields

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

Nanomagnetic Materials: Fabrication, Characterization and Application explores recent studies of conventional nanomagnetic materials in spintronics, data storage, magnetic sensors and biomedical applications. In addition, the book also reviews novel magnetic characteristics induced in two-dimensional materials, diamonds, and those induced by the artificial formation of lattice defect and heterojunction as novel nanomagnetic materials. Nanomagnetic materials are usually based on d- and f-electron systems. They are an important solution to the demand for higher density of information storage, arising from the emergence of novel technologies required for non-volatile memory systems. Advances in the understanding of magnetization dynamics and in the characteristics of nanoparticles or surface of nanomagnetic materials is resulting in greater expansion of applications of nanomagnetic materials, including in biotechnology, sensor devices, energy harvesting, and power generating systems. This book provides a cogent overview of the latest research on novel nanomagnetic materials, including spintronic nanomagnets, molecular nanomagnets, self-assembling magnetic nanomaterials, nanoparticles, multifunctional materials, and heterojunction-induced novel magnetism. Explains manufacturing principles and process for nanomagnetic materials Discusses physical and chemical properties and potential industrial applications, such as magnetic data storage, sensors, oscillator, permanent magnets, power generations, and biomedical applications Assesses the major challenges of using magnetic nanomaterials on a broad scale

Introductory chapters help newcomers to understand the basic concepts, and the more advanced chapters give the current state of the art for most spin dynamic issues in the milliseconds to femtoseconds range. Emphasis is placed on both the discussion of the experimental techniques and on the theoretical work. The comprehensive presentation of these developments makes this volume very timely and valuable for every researcher working in the field of magnetism.