Ion Solid Interactions

Comprehensive guide to an important materials science technique for students and researchers.

In this book the author discusses the investigation of ion bombardment of solids by computer simulation, with the aim of demonstrating the usefulness of this approach to the problem of interactions of ions with solids. The various chapters present the basic physics behind the simulation programs, their structure and many applications to different topics. The two main streams, the binary collision model and the classical dynamics model, are discussed, as are interaction potentials and electronic energy losses. The main topics investigated are backscattering, sputtering and implantation for incident atomic particles with energies from the eV to the MeV range. An extensive overview of the literature is given, making this book of interest to the active reseacher as well to students entering the field.

This book presents the method of ion beam modification of solids in realization, theory and applications in a comprehensive way. It provides a review of the physical basics of ion-solid interaction and on ion-beam induced structural modifications of solids. Ion beams are widely used to modify the physical properties of materials. A complete theory of ion stopping in matter and the calculation of the energy loss due to nuclear and electronic interactions are presented including the effect of ion channeling. To explain structural modifications due to high electronic excitations, different concepts are presented with special emphasis on the thermal spike model. Furthermore, general concepts of damage evolution as a function of ion mass, ion fluence, ion flux and temperature are described in detail and their limits and applicability are discussed. The effect of nuclear and electronic energy loss on structural modifications of solids such as damage formation, phase transitions and amorphization is reviewed for insulators and semiconductors. Finally some selected applications of ion beams are given.

Cluster Ion-Solid Interactions: Theory, Simulation, and Experiment provides an overview of various concepts in cluster physics and related topics in physics, including the fundamentals and tools underlying novel cluster ion beam technology. The material is based on the author’s highly regarded courses at Kyoto University, Purdue University, the Moscow Institute of Physics and Technology, and the Moscow Engineering Physics Institute as well as his research results on cluster ion beam applications at Kyoto University. The author introduces the basic principles of statistical physics and thermodynamics before covering applications, experimental justifications, and practical implementations. He describes classical nucleation theory and explains the drawbacks of this theory, showing how accurate modeling and simulations are necessary to justify theoretical approaches and simplifications.

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.