Microstructure Evolution During Irradiation Volume 439

This book from MRS discusses the evolution of a material's microstructure as a result of its interaction with energetic particles such as ions, neutrons or electrons. The book is inter-disciplinary and emphasizes all classes of materials including metals, intermetallic compounds, ceramics, polymers, superconductors, semiconductors and insulators. A strong focus is placed on experimental techniques for measuring and quantifying damage and microstructure changes, and on computer simulation techniques for predicting and understanding this phenomena. Topics include: ion-implantation damage in semiconductors; radiation damage in metals; radiation damage in ceramics; radiation effects in polymers and beam-induced effects.

This book brings together an interdisciplinary group of surface physicists, chemists and materials scientists to present the most current advances in the area of surface science. Both scientific and technological issues are addressed. Topics include: surface and step structure; morphology, roughness and instabilities; kinetic processes; nucleation on surfaces and interfaces; mechanics of surfaces; self-assembled and Langmuir-Blodgett films; thin-film surfaces and growth; chemistry and modification of surfaces and metal-semiconductor interfaces.

Radiation can produce dramatic improvements or degradation in the properties of materials, so an understanding of the microstructural changes that occur during irradiation is critical for the development of predictive models. This book, first published in 2001, brings together researchers working on different materials systems so that similarities and differences in radiation effects can be compared. More specifically, it focuses on the microstructural changes which occur in solids during irradiation with ions, electrons, neutrons, gamma rays and X-rays. Materials of interest include metals, intermetallics, semiconductors, insulators and superconductors. Papers from a joint session on 'Multiscale Modelling of Materials' as well as experimental and theoretical studies are also included. Topics include: semiconductors; fundamentals of radiation effects in electronic materials, ceramics and polymers; ceramics and nuclear waste materials; austenitic and reactor pressure vessel steels; fundamental aspects of defect production and microstructure evolution in metals; and modelling radiation effects in metals.

The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.

Proceedings of the December 1996 symposium. Contains 159 papers which describe materials advances involving stuctures spanning more than five orders of magnitude in size--from Group IV molecular clusters to single-crystal grains large enough for fabrication of thin-film transistors within their boundaries. Sections cover topics such as the theory of semiconductor molecular clusters and nanocrystals; luminescent Group IV clusters/nanocrystals and quantum wells; semiconductor systems confined in three and one dimensions; Group III- V, Group II-VI, and metal sulfide, iodide, and oxide nanocrystals; porous silicon; applications of nanocrystal and porous semiconductors; light-emitting properties and applications of porous Si; and research results on the nano-, micro-, and polycrystalline thin films. Annotation copyrighted by Book News, Inc., Portland, OR