Microwave Semiconductor Devices

The main objective of this comprehensive text is to introduce the students the physics and the operational principles as well as the characteristics, and applications of the microwave semiconductor devices. These devices are making a revolutionary change in the field of communication and radars. As a result of the accelerating rate of growth of microwave technology in research and industry, students, engineers and scientists need to understand the theoretical and experimental design and analysis of these devices. The book also deals with higher frequency microwaves called millimeter waves, which are finding wide applications in ground and satellite communication, radars and missile guidance. Millimeter wave system development is one of the most advanced technologies in radio science, especially in view of the ever increasing demand of communication and saturation of microwave frequency range with increasing number of channels. The book discusses in greater detail about the semiconductor devices such as IMPATT diodes, Gunn diodes, HEMT diodes and FET diodes. It emphasizes on various two and three terminal devices in the microwave and millimeter wave field based on silicon and Groups III-V compound semiconductors. The book is intended to serve as a textbook for undergraduate electronics and electrical engineering students and postgraduate students of physics. It would also be a valuable reference book for professional engineers and physicists.

We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible.

Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

This book describes the physical basis of microwave electronics and related topics, such as microwave vacuum and microwave semiconductor devices. It comprehensively discusses the main types of microwave vacuum and microwave semiconductor devices, their principles of action, theory, parameters and characteristics, as well as ways of increasing the frequency limit of various devices up to the terahertz frequency band. Further, it applies a unified approach to describe charged particle interaction within electromagnetic fields and the motion laws of charged particles in various media. The book is intended as a manual for researchers and engineers, as well as advanced undergraduate and graduate students.

Eine Einführung in das Gebiet der optoelektronischen pn-Halbleiterbauelemente aus den Blickwinkeln der Materialeigenschaften, der Funktionsprinzipien, der Herstellung und Verpackung, der Zuverlässigkeit und der Anwendung. Das Buch ist für Anfänger gedacht, daher sind die Erläuterungen in geeigneter Weise vereinfacht und theoretische Grundlagen wurden zugunsten anwendungsspezifischer Aspekte zum Teil übersprungen. (12/98)