Mid Infrared Quantum Cascade Lasers For Chaos Secure Communications

The mid-infrared domain is a promising optical domain because it holds two transparency atmospheric windows, as well as the fingerprint of many chemical compounds. Quantum cascade lasers (QCLs) are one of the available sources in this domain and have already been proven useful for spectroscopic applications and free-space communications. This thesis demonstrates how to implement a private free-space communication relying on mid-infrared optical chaos and this requires an accurate cartography of non-linear phenomena in quantum cascade lasers. This private transmission is made possible by the chaos synchronization of two twin QCLs. Chaos in QCLs can be generated under optical injection or external optical feedback. Depending on the parameters of the optical feedback, QCLs can exhibit several non-linear phenomena in addition to chaos. Similarities exist between QCLs and laser diodes when the chaotic dropouts are synchronized with an external modulation, and this effect is known as the entrainment phenomenon. With a cross-polarization reinjection technique, QCLs can generate all-optical square-waves. Eventually, it is possible to trigger optical extreme events in QCLs with tilted optical feedback. All these experimental results allow a better understanding of the non-linear dynamics of QCLs and will extend the potential applications of this kind of semiconductor lasers.

This book describes the physics, fabrication technology, and applications of the quantum cascade laser.

A state-of-the-art overview of this rapidly expanding field, featuring fundamental theory, practical applications, and real-life examples.

When using conventional substrates, such as InP and GaAs, the materials constituting the superlattice (SL) core region of the quantum cascade laser (QCL) are constrained by strain-induced critical-thickness limitations. Metamorphic buffer layers (MBLs) can serve as "virtual substrates" with a designer-chosen surface lattice constant, thus expanding the compositional-design space for a variety of device structures, including short-wavelength QCLs. An optimized short-wavelength (3.4 [mu]m) single-phonon-resonant (SPR)+ miniband extraction QCL design, grown on an [InxGa1-xAs] MBL, is presented along with the optical and thermal device considerations in play. MBLs can be grown with a variety of graded regions such as linear composition grade from GaAs to [InxGa1-xAs] or by employing dislocation filters between Si substrate and InP. QCL and test superlattices' regrowth on these MBLs with the corresponding materials and device analysis, is presented in this work. In addition to the materials limitation for the design of QCL devices, the requirement to have the constituent layers (1-5 nm) to be precisely controlled in the various compositions and thicknesses, is a challenge. Interfacial grading in strained SLs is studied via atom probe tomography for SLs with various layer thicknesses and relative lattice strains. The tip reconstructions are analyzed by fitting the interfaces to diffusion profiles. Mechanisms possible for the observed interdiffusion profile, such as surface segregation and/or bulk diffusion, are discussed. With an understanding of the compositional gradient at the interfaces, together with optimized QCL designs and regrowth on the MBLs, short-wavelength QCLs with high performances can be achieved

The active region of conventional Quantum Cascade Lasers (QCLs) is composed of quantum wells and barriers of fixed alloy composition. As a consequence, they suffer severe carrier leakage from the upper laser level, as evidenced by low characteristic-temperature values for both the threshold current density and the slope efficiency, over a wide range of heatsink temperatures above room temperature. Here, we describe three methods by which the performance of these devices can be substantially increased. First, to suppress carrier leakage, the energy separation between the upper laser level and the next-higher energy state in the active region, E54 (or E43), needs to be increased; to this end, we propose 4.8μm-emitting, step-tapered active-region (STA) QCLs for nearly complete suppression of carrier leakage. Secondly, we introduce an 8-9μm-emitting STA-QCL design, which also employs a miniband-like carrier extraction scheme to ensures rapid depopulation of the lower laser level. We call the fast, carrier-extraction scheme resonant extraction (RE) since it involves resonant-(tunneling)-extraction not only from lower active-region levels but also from the lower laser level. When both the STA concept and miniband-like carrier extraction scheme are applied, in so-called STA-RE QCLs, it is shown that record-high internal differential efficiency hid values of ~ 86% can be achieved, by comparison to the prior state-of-the-art values of 57 to 67%. Furthermore, the fundamental upper limit for hid is shown be ~ 90%. With this improvement to internal differential efficiency, the wall-plug efficiency, hwp of mid-infrared-emitting QCLs should be ~34% higher than previously predicted, with hwp reaching values in excess of 40% for 4.6μm-emitting QCLs. Preliminary results from 5.0μm-emitting STA-RE QCLs are shown. Lastly, we show how single QCL emitters can be monolithically beam-combined to create High-Index-Contrast Photonic-Crystal (HC-PC) lasers as a means to coherently scale a QCL's output power while maintaining high beam quality, even under continuous-wave (CW) operating conditions. We present one such structure, which provided an output power of 5.5 W in a far-field beam pattern with lobewidths ~1.65 times the diffraction limit, and 82% energy contained in the central lobe. Methods to further improve on this result are also discussed.