Physics Of Semiconductors The Proceedings Of The 22nd International Conference In 3 Volumes
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Physics Of Semiconductors The Proceedings Of The 22nd International Conference In 3 Volumes
Author | : David J Lockwood |
Publsiher | : World Scientific |
Total Pages | : 2858 |
Release | : 1995-01-20 |
Genre | : Electronic Book |
ISBN | : 9789814550154 |
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These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
22nd International Conference on the Physics of Semiconductors
Author | : David J. Lockwood |
Publsiher | : World Scientific Publishing Company |
Total Pages | : 956 |
Release | : 1995 |
Genre | : Science |
ISBN | : UCSD:31822018906388 |
Download 22nd International Conference on the Physics of Semiconductors Book in PDF, Epub and Kindle
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes
Author | : E M Anastassakis,John D Joannopoulos |
Publsiher | : World Scientific |
Total Pages | : 2768 |
Release | : 1990-11-29 |
Genre | : Electronic Book |
ISBN | : 9789814583633 |
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Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Nuclear Science Abstracts
Author | : Anonim |
Publsiher | : Unknown |
Total Pages | : 1494 |
Release | : 1962 |
Genre | : Nuclear energy |
ISBN | : MINN:31951T00248863D |
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Physics of Semiconductors
Author | : Anonim |
Publsiher | : Unknown |
Total Pages | : 1328 |
Release | : 1979 |
Genre | : Electronic Book |
ISBN | : OCLC:1088756042 |
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Physics of Semiconductors
Author | : MarĂlia Caldas,Nelson Studart |
Publsiher | : American Institute of Physics |
Total Pages | : 0 |
Release | : 2010-02-24 |
Genre | : Technology & Engineering |
ISBN | : 0735407363 |
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The conference covered the current and future direction for research in the area of physics of semiconductors, such as growth, sufaces, and interfaces, defects and impurities, wide-band-gap semiconductors, molecular systems, and organic semiconductors, and others.
Technical Abstract Bulletin
Author | : Anonim |
Publsiher | : Unknown |
Total Pages | : 848 |
Release | : 1967 |
Genre | : Science |
ISBN | : CORNELL:31924057185591 |
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Defect and Impurity Engineered Semiconductors and Devices III Volume 719
Author | : S. Ashok |
Publsiher | : Unknown |
Total Pages | : 522 |
Release | : 2002-08-09 |
Genre | : Technology & Engineering |
ISBN | : UCSD:31822032144057 |
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This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.