Proceedings Of The Avs Symposium On Ion Implantation New Prospects From Materials Modification 14 June 1978 T J Watson Research Center Yorktown Heights New York

Includes entries for maps and atlases.

These proceedings contain the reviewed papers presented at the Symposium J on "Ion Implantation into Semiconductors, Oxides and Ceramics", which was held at the Spring Meeting of the European Materials Research Society in Strasbourg, France, 16-19, June 1998. The symposium attracted 110 contributions, with authors from 31 nations in 5 continents. It was thereby the largest in a series of E-MRS ion beam symposia, documenting the importance of ion beam techniques and research in this area. The aim of this symposium was to provide a forum for the discussion of new results in the implantation of materials from three different classes: semiconductors, oxides and ceramics.

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In 1879, while a graduate student under Henry Rowland at the Physics Department of The Johns Hopkins University, Edwin Herbert Hall discovered what is now universally known as the Hall effect. A symposium was held at The Johns Hopkins University on November 13, 1979 to commemorate the lOOth anniversary of the discovery. Over 170 participants attended the symposium which included eleven in vited lectures and three speeches during the luncheon. During the past one hundred years, we have witnessed ever ex panding activities in the field of the Hall effect. The Hall effect is now an indispensable tool in the studies of many branches of condensed matter physics, especially in metals, semiconductors, and magnetic solids. Various components (over 200 million!) that utilize the Hall effect have been successfully incorporated into such devices as keyboards, automobile ignitions, gaussmeters, and satellites. This volume attempts to capture the important aspects of the Hall effect and its applications. It includes the papers presented at the symposium and eleven other invited papers. Detailed coverage of the Hall effect in amorphous and crystalline metals and alloys, in magnetic materials, in liquid metals, and in semiconductors is provided. Applications of the Hall effect in space technology and in studies of the aurora enrich the discussions of the Hall effect's utility in sensors and switches. The design and packaging of Hall elements in integrated circuit forms are illustrated.