Properties And Devices

This volume focuses on the synthesis, properties and applications of nanowires and nanobelts based on functional materials. Novel devices and applications made from functional oxide nanowires and nanobelts will be presented first, showing their unique properties and applications.

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

A comprehensive and accessible introduction to 2D materials, covering basic physics, electronic and optical properties, and potential applications.

Optoelectronic devices impact many areas of society, from simple household appliances and multimedia systems to communications, computing, spatial scanning, optical monitoring, 3D measurements and medical instruments. This is the most complete book about optoelectromechanic systems and semiconductor optoelectronic devices; it provides an accessible, well-organized overview of optoelectronic devices and properties that emphasizes basic principles.

Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.

This book focuses on the properties and configuration of the ceramic which facilitates proper application of material to the task at hand. It is intended for workers in electronics, ceramics, computers, or telecommunications fields, to broaden their expertise in the area of electronic ceramics.

The proceedings present the latest achievements in one dimensional materials as presented at the 4th international conference on one-dimensional nanomaterials. The scope of the proceedings covers the inventions in controllable synthesis, structure and property characterizations, nanodamage, modeling and simulation, device fabrication and novel applications of 1D nanomaterials, such as electro-optical devices, electro-mechanical devices, bio-sensors and solar cells, etc.