Silicide Technology For Integrated Circuits

This is the first book to provide guidance on the development and application of metal silicide technology as it emerges from the scientific to the prototype and manufacturing stages. Other key topics covered are fundamentals, present and future silicide technology for Si-based devices, and characterisation methods. Suitable for engineers and students in microelectronics.

This is the first book to comprehensively record the authors’ authoritative knowledge and practical experience of IC manufacturing, including the tremendous developments of recent years. With its strong application orientation, this is a must-have book for professionals in semiconductor industries.

Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering

This issue of ECS Transactions covers emerging materials, process and technology options for large-area silicon wafers to enhance advanced IC performance or to enable revolutionary device structures with entirely new functionalities. Topics : high-mobility channel materials, (e.g. strained Si/Ge, compound semiconductors and graphene), high-performance gate stacks and low-resistivity junctions and contacts on new, Si-compatible materials; new materials and processes for 3-D (TSV) integration ; synthesis of nano-structures including wires, pores and membranes of Si-compatible materials; novel MEMS/NEMS structures and their integration with the mainstream Si-IC technology.

Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.

The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.