Silicon Devices

Liquid Crystal on Silicon (LCoS) has become one of the most widespread technologies for spatial light modulation in optics and photonics applications. These reflective microdisplays are composed of a high-performance silicon complementary metal oxide semiconductor (CMOS) backplane, which controls the light-modulating properties of the liquid crystal layer. State-of-the-art LCoS microdisplays may exhibit a very small pixel pitch (below 4 μm), a very large number of pixels (resolutions larger than 4K), and high fill factors (larger than 90%). They modulate illumination sources covering the UV, visible, and far IR. LCoS are used not only as displays but also as polarization, amplitude, and phase-only spatial light modulators, where they achieve full phase modulation. Due to their excellent modulating properties and high degree of flexibility, they are found in all sorts of spatial light modulation applications, such as in LCOS-based display systems for augmented and virtual reality, true holographic displays, digital holography, diffractive optical elements, superresolution optical systems, beam-steering devices, holographic optical traps, and quantum optical computing. In order to fulfil the requirements in this extensive range of applications, specific models and characterization techniques are proposed. These devices may exhibit a number of degradation effects such as interpixel cross-talk and fringing field, and time flicker, which may also depend on the analog or digital backplane of the corresponding LCoS device. The use of appropriate characterization and compensation techniques is then necessary.

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy

Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.

The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; CMOS-only applications, such as subthreshold current and parasitic latch-up; Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.

From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal

The first nonlinear optical effect was observed in the 19th century by John Kerr. Nonlinear optics, however, started to grow up only after the invention of the laser, when intense light sources became easily available. The seminal studies by Peter Franken and Nicolaas Bloembergen, in the 1960s, paved the way for the development of today’s nonlinear photonics, the field of research that encompasses all the studies, designs, and implementations of nonlinear optical devices that can be used for the generation, communication, and processing of information. This field has attracted significant attention, partly due to the great potential of exploiting the optical nonlinearities of new or advanced materials to induce new phenomena and achieve new functions. According to Clarivate Web of Science, almost 200,000 papers were published that refer to the topic “nonlinear optic*”. Over 36,000 papers were published in the last four years (2015–2018) with the same keyword, and over 17,000 used the keyword “nonlinear photonic*”. The present Special Issue of Micromachines aims at reviewing the current state of the art and presenting perspectives of further development. Fundamental and applicative aspects are considered, with special attention paid to hot topics that may lead to technological and scientific breakthroughs.