Statistical Modeling For Computer Aided Design Of Mos Vlsi Circuits

As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. This tool must be based on a statistical model which comprehends the effect of device and circuit characteristics, such as device size, bias, and circuit layout, which are under the control of the circuit designer on the variability of circuit performance. The distinctive feature of the CAD tool described in this book is its ability to accurately model and simulate the effect in both intra- and inter-die process variability on analog/digital circuits, accounting for the effects of the aforementioned device and circuit characteristics. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits serves as an excellent reference for those working in the field, and may be used as the text for an advanced course on the subject.

This volume is the first complete overview of VLSI design methods that use statistical techniques for dealing with the random phenomena that are inherent in all VLSI manufacturing processes. VLSI design today cannot be performed without taking into account economic-related issues such as yield, cost and performance oriented tradeoffs. The book includes practical methods relevant to real life applications. It contains edited papers by top industrial and academic specialists in the field. These papers describe all three categories of CAD tools employed for statistical design: IC performance optimization tools, process simulation tools and tools for characterization of process fluctuations. In each category both practical approaches and more theoretical approaches are presented.

Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

This volume of The Circuits and Filters Handbook, Third Edition focuses on computer aided design and design automation. In the first part of the book, international contributors address topics such as the modeling of circuit performances, symbolic analysis methods, numerical analysis methods, design by optimization, statistical design optimization, and physical design automation. In the second half of the text, they turn their attention to RF CAD, high performance simulation, formal verification, RTK behavioral synthesis, system-level design, an Internet-based micro-electronic design automation framework, performance modeling, and embedded computing systems design.

This book brings together innovative modelling, simulation and design techniques in CMOS, SOI, GaAs and BJT to achieve successful high-yield manufacture for low-power, high-speed and reliable-by-design analogue and mixed-mode integrated systems.

The tools and techniques you need to break the analog design bottleneck! Ten years ago, analog seemed to be a dead-end technology. Today, System-on-Chip (SoC) designs are increasingly mixed-signal designs. With the advent of application-specific integrated circuits (ASIC) technologies that can integrate both analog and digital functions on a single chip, analog has become more crucial than ever to the design process. Today, designers are moving beyond hand-crafted, one-transistor-at-a-time methods. They are using new circuit and physical synthesis tools to design practical analog circuits; new modeling and analysis tools to allow rapid exploration of system level alternatives; and new simulation tools to provide accurate answers for analog circuit behaviors and interactions that were considered impossible to handle only a few years ago. To give circuit designers and CAD professionals a better understanding of the history and the current state of the art in the field, this volume collects in one place the essential set of analog CAD papers that form the foundation of today's new analog design automation tools. Areas covered are: * Analog synthesis * Symbolic analysis * Analog layout * Analog modeling and analysis * Specialized analog simulation * Circuit centering and yield optimization * Circuit testing Computer-Aided Design of Analog Integrated Circuits and Systems is the cutting-edge reference that will be an invaluable resource for every semiconductor circuit designer and CAD professional who hopes to break the analog design bottleneck.

Covers the statistical analysis and optimization issues arising due to increased process variations in current technologies. Comprises a valuable reference for statistical analysis and optimization techniques in current and future VLSI design for CAD-Tool developers and for researchers interested in starting work in this very active area of research. Written by author who lead much research in this area who provide novel ideas and approaches to handle the addressed issues