Ultra High Speed Cmos Circuits

The book covers the CMOS-based millimeter wave circuits and devices and presents methods and design techniques to use CMOS technology for circuits operating beyond 100 GHz. Coverage includes a detailed description of both active and passive devices, including modeling techniques and performance optimization. Various mm-wave circuit blocks are discussed, emphasizing their design distinctions from low-frequency design methodologies. This book also covers a device-oriented circuit design technique that is essential for ultra high speed circuits and gives some examples of device/circuit co-design that can be used for mm-wave technology.

Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.

With the exponential growth of the number of Internet nodes, the volume of the data transported on the backbone has increased with the same trend. The load of the global Internet backbone will soon increase to tens of terabits per second. This indicates that the backbone bandwidth requirements will increase by a factor of 50 to 100 every seven years. Transportation of such high volumes of data requires suitable media with low loss and high bandwidth. Among the available transmission media, optical fibers achieve the best performance in terms of loss and bandwidth. High-speed data can be transported over hundreds of kilometers of single-mode fiber without significant loss in signal integrity. These fibers progressively benefit from reduction of cost and improvement of perf- mance. Meanwhile, the electronic interfaces used in an optical network are not capable of exploiting the ultimate bandwidth of the fiber, limiting the throughput of the network. Different solutions at both the system and the circuit levels have been proposed to increase the data rate of the backbone. System-level solutions are based on the utilization of wave-division multiplexing (WDM), using different colors of light to transmit s- eral sequences simultaneously. In parallel with that, a great deal of effort has been put into increasing the operating rate of the electronic transceivers using highly-developed fabrication processes and novel c- cuit techniques.

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

This book describes recent research on terahertz CMOS design for high-speed wireless communication. The topics covered include fundamental technologies for terahertz CMOS design, amplifier design, physical design approaches, transceiver design, and future prospects.