X Ray Scattering From Semiconductors 2n

This third edition has been extended considerably to incorporate more information on instrument influences on the interpretation of X-ray scattering profiles and reciprocal space maps. Another significant inclusion is on the scattering from powder samples, covering a new theoretical approach that explains features that conventional theory cannot. The new edition includes some of the latest methodologies and theoretical treatments, including the latest thinking on dynamical theory and diffuse scattering. Recent advances in detectors also present new opportunities for rapid data collection and some very different approaches in data collection techniques; the possibilities associated with these advances will be included.This edition should be of interest to those who use X-ray scattering to understand more about their samples, so that they can make a better judgment of the parameter and confidence levels in their analyses, and how the combination of instrument, sample and detection should be considered as a whole to ensure this.

This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection. The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces. A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented. Contents:An Introduction to Semiconductor MaterialsAn Introduction to X-Ray ScatteringEquipment for Measuring Diffraction PatternsA Practical Guide to the Evaluation of Structural Parameters Readership: Postgraduate researchers in crystallography, materials science, semiconductors and physics. Keywords:X-Ray;Diffraction;Scattering;Semiconductors;Rocking Curve;Reciprocal Space;Topography;High Resolution;Thin Films;Reflectometry;Dynamical Theory

This third edition has been extended considerably to incorporate more information on instrument influences on the interpretation of X-ray scattering profiles and reciprocal space maps. Another significant inclusion is on the scattering from powder samples, covering a new theoretical approach that explains features that conventional theory cannot. The new edition includes some of the latest methodologies and theoretical treatments, including the latest thinking on dynamical theory and diffuse scattering. Recent advances in detectors also present new opportunities for rapid data collection and some very different approaches in data collection techniques; the possibilities associated with these advances will be included. This edition should be of interest to those who use X-ray scattering to understand more about their samples, so that they can make a better judgment of the parameter and confidence levels in their analyses, and how the combination of instrument, sample and detection should be considered as a whole to ensure this.

This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces.A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.

This monograph represents a critical survey of the outstanding capabilities of X-ray diffuse scattering for the structural characterization of mesoscopic material systems. The mesoscopic regime comprises length scales ranging from a few up to some hundreds of nanometers. It is of particular relevance at semiconductor layer systems where, for example, interface roughness or low-dimensional objects such as quantum dots and quantum wires have attracted much interest. An extensive overview of the present state-of-the-art theory of X-ray diffuse scattering at mesoscopic structures is given followed by a valuable description of various experimental techniques. Selected up-to-date examples are discussed. The aim of the present book is to combine aspects of self-organized growth of mesoscopic structures with corresponding X-ray diffuse scattering experiments.

Understand the Physics of the Solid State Updated and expanded with new topics, The Materials Physics Companion, 2nd Edition puts the physics of the solid state within the reach of students by offering an easy-to-navigate pathway from basic knowledge through to advanced concepts. This edition illustrates how electrical and magnetic properties of matter arise from the basic principles of quantum mechanics in a way that is accessible to science and engineering students. A Convenient, Student-Friendly Format Rich with Diagrams and Clear Explanations The book uses the unique signature style of the author’s other companion books, providing detailed graphics, simple and clear explanations of difficult concepts, and annotated mathematical treatments. It covers quantum mechanics, x-ray analysis, solid-state physics, the mechanical and thermal properties of solids, the electrical and magnetic properties of solids, and superconductivity, assuming no prior knowledge of these advanced areas. Suitable for undergraduate students in science and engineering, the book is also a handy refresher for professional scientists and educators. Be sure to check out the author’s other companion books: The Mathematics Companion: Mathematical Methods for Physicists and Engineers, 2nd Edition The Physics Companion, 2nd Edition The Electronics Companion: Devices and Circuits for Physicists and Engineers, 2nd Edition The Chemistry Companion

This book develops the mathematics of differential geometry in a way more intelligible to physicists and other scientists interested in this field. This book is basically divided into 3 levels; level 0, the nearest to intuition and geometrical experience, is a short summary of the theory of curves and surfaces; level 1 repeats, comments and develops upon the traditional methods of tensor algebra analysis and level 2 is an introduction to the language of modern differential geometry. A final chapter (chapter IV) is devoted to fibre bundles and their applications to physics. Exercises are provided to amplify the text material.

Hardbound. This book covers the topics essential to gamma- and x-ray spectrometry as it is now practiced with semiconductor detectors in the energy range from 5keV to 3MeV. This includes useful physical and mathematical background information, the components of a standard photon spectrometer, spectrum analysis procedures, the energy and efficiency calibration, energy and emission-rate measurement methods and some application examples.