X Ray Scattering From Semiconductors And Other Materials 3rd Edition

This third edition has been extended considerably to incorporate more information on instrument influences on the interpretation of X-ray scattering profiles and reciprocal space maps. Another significant inclusion is on the scattering from powder samples, covering a new theoretical approach that explains features that conventional theory cannot. The new edition includes some of the latest methodologies and theoretical treatments, including the latest thinking on dynamical theory and diffuse scattering. Recent advances in detectors also present new opportunities for rapid data collection and some very different approaches in data collection techniques; the possibilities associated with these advances will be included. This edition should be of interest to those who use X-ray scattering to understand more about their samples, so that they can make a better judgment of the parameter and confidence levels in their analyses, and how the combination of instrument, sample and detection should be considered as a whole to ensure this.

This third edition has been extended considerably to incorporate more information on instrument influences on the interpretation of X-ray scattering profiles and reciprocal space maps. Another significant inclusion is on the scattering from powder samples, covering a new theoretical approach that explains features that conventional theory cannot. The new edition includes some of the latest methodologies and theoretical treatments, including the latest thinking on dynamical theory and diffuse scattering. Recent advances in detectors also present new opportunities for rapid data collection and some very different approaches in data collection techniques; the possibilities associated with these advances will be included.This edition should be of interest to those who use X-ray scattering to understand more about their samples, so that they can make a better judgment of the parameter and confidence levels in their analyses, and how the combination of instrument, sample and detection should be considered as a whole to ensure this.

The scales involved in modern semiconductor manufacturing and microelectronics continue to plunge downward. Effective and accurate characterization of materials with thicknesses below a few nanometers can be achieved using x-rays. While many books are available on the theory behind x-ray metrology (XRM), X-Ray Metrology in Semiconductor Manufacturing is the first book to focus on the practical aspects of the technology and its application in device fabrication and solving new materials problems. Following a general overview of the field, the first section of the book is organized by application and outlines the techniques that are best suited to each. The next section delves into the techniques and theory behind the applications, such as specular x-ray reflectivity, diffraction imaging, and defect mapping. Finally, the third section provides technological details of each technique, answering questions commonly encountered in practice. The authors supply real examples from the semiconductor and magnetic recording industries as well as more than 150 clearly drawn figures to illustrate the discussion. They also summarize the principles and key information about each method with inset boxes found throughout the text. Written by world leaders in the field, X-Ray Metrology in Semiconductor Manufacturing provides real solutions with a focus on accuracy, repeatability, and throughput.

This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces.A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.

Since its development toward the end of the past millennium, high-resolution Inelastic X-Ray Scattering (IXS) has substantially improved our knowledge of the collective dynamics of liquids at mesoscopic scales, that is, over distances and time-lapses approaching those typical of first neighboring atoms' interactions. However, despite the undoubted scientific relevance and the rapid evolution toward maturity, comprehensive monographs on this technique are not available. The primary purpose of this book is to partially fill this lack while providing a helpful reference for both mature scientists and less experienced researchers in the field.After a general introduction to the fundamental aspects of scattering measurements, the IXS cross-section is analytically derived, and the complementarity with Inelastic Neutron Scattering is discussed in detail.The remainder of the book reviews representative IXS studies on simple fluids focusing on topics as relevant as the dynamic crossover from the hydrodynamic to the kinetic regime, the onset of relaxation phenomena and related high-frequency viscoelasticity, the gradual emergence of quantum effects, the evidence of dynamic boundaries partitioning the supercritical domain, the prevalence of solid-like aspects in the high-frequency dynamics of fluids, and the dynamic fingerprints of the polymorphic nature of liquid aggregates.

During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.

X-ray scattering techniques are a family of nondestructive analytical techniques. Using these techniques, scientists obtain information about the crystal structure and chemical and physical properties of materials. Nowadays, different techniques are based on observing the scattered intensity of an X-ray beam hitting a sample as a function of incident and scattered angle, polarization, and wavelength. This book is intended to give overviews of the relevant X-ray scattering techniques, particularly about inelastic X-ray scattering, elastic scattering, grazing-incidence small-angle X-ray scattering, small-angle X-ray scattering, and high-resolution X-ray diffraction, and, finally, applications of X-ray spectroscopy to study different biological systems.

This monograph represents a critical survey of the outstanding capabilities of X-ray diffuse scattering for the structural characterization of mesoscopic material systems. The mesoscopic regime comprises length scales ranging from a few up to some hundreds of nanometers. It is of particular relevance at semiconductor layer systems where, for example, interface roughness or low-dimensional objects such as quantum dots and quantum wires have attracted much interest. An extensive overview of the present state-of-the-art theory of X-ray diffuse scattering at mesoscopic structures is given followed by a valuable description of various experimental techniques. Selected up-to-date examples are discussed. The aim of the present book is to combine aspects of self-organized growth of mesoscopic structures with corresponding X-ray diffuse scattering experiments.